HIT 2SC2856, 2SC2855 Datasheet

2SC2855, 2SC2856

Silicon NPN Epitaxial

Application

•Low frequency low noise amplifier

•Complementary pair with 2SA1190 and 2SA1191

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

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2

1

2SC2855, 2SC2856

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SC2855

2SC2856

Unit

Collector to base voltage

VCBO

90

120

V

Collector to emitter voltage

VCEO

90

120

V

Emitter to base voltage

VEBO

5

5

V

Collector current

IC

100

100

mA

Emitter current

IE

–100

–100

mA

Collector power dissipation

PC

400

400

mW

Junction temperature

Tj

150

150

°C

Storage temperature

Tstg

–55 to +150

–55 to +150

°C

2

2SC2855, 2SC2856

Electrical Characteristics (Ta = 25°C)

				2SC2855													2SC2856
Item		Symbol Min			Typ				Max Min															Typ Max Unit					Test conditions
Collector to base		V(BR)CBO		90	—			—							120						—				—	V	I		C = 10 µA, IE = 0
breakdown voltage
Collector to emitter		V(BR)CEO		90	—			—							120						—				—	V	I		C = 1 mA, RBE = ∞
breakdown voltage
Emitter to base		V(BR)EBO		5	—			—							5						—				—	V	I		E = 10 µA, IC = 0
breakdown voltage
Collector cutoff current		ICBO		—	—	0.1										—			—					0.1		µA			VCB =		70 V, IE = 0
Emitter cutoff current		IEBO		—	—	0.1										—			—					0.1		µA			VEB =		2 V, IC = 0
DC current transfer ratio		h *1		250	—	800									250								—		800		V		CE	=	12 V, I	C	= 2 mA*2
			FE
Collector to emitter		VCE(sat)		—	0.05	0.10											—		0.05						0.10	V	I		C = 10 mA, IB = 1 mA*2
saturation voltage
Base to emitter saturation		VBE(sat)		—	0.7	1.0											—		0.7						1.0	V
voltage
Gain bandwidth product		fT		—	310			—								—			310						—	MHz	V		CE =		6 V, IC = 10 mA
Collector output		Cob		—	3			—								—			3						—	pF	V		CB =		10 V, IE = 0,
capacitance																													f = 1 MHz
Noise figure		NF		—	0.15	1.5											—		0.15						1.5	dB	V		CE =		6 V, IC = 0.1 mA,
																													Rg = 10 kΩ, f = 1 kHz
				—	0.2	2.0											—		0.2						2.0	dB	V		CE =		6 V, IC = 0.1 mA,
																													Rg = 10 kΩ, f = 10 Hz
Noise voltage referred to		en		—	0.7			—								—			0.7						—	nV/	√Hz VCE =				6 V, IC = 10 mA,
input																													Rg = 0, f = 1 kHz
Notes: 1. The 2SC2855 and 2SC2856 are grouped by hFE as follows.
2.	Pulse test
D	E
250 to 500	400 to 800

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