HIT 2SC2618 Datasheet

2SC2618

Silicon NPN Epitaxial

Application

•Low frequency amplifier

•Complementary pair with 2SA1121

Outline

MPAK

3

		1	Emitter
		1.
	2	2.	Base
		3.	Collector

2SC2618

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	35	V
Collector to emitter voltage	VCEO	35	V
Emitter to base voltage	VEBO	4	V
Collector current	IC	500	mA
Collector power dissipation	PC	150	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item			Symbol	Min	Typ	Max	Unit	Test conditions
Collector to base breakdown			V(BR)CBO	35	—	—	V	I	C = 10 A, IE = 0
voltage
Collector to emitter breakdown			V(BR)CEO	35	—	—	V	I	C = 1 mA, RBE = ∞
voltage
Emitter to base breakdown			V(BR)EBO	4	—	—	V	I	E = 10 A, IC = 0
voltage
Collector cutoff current			ICBO	—	—	0.5	A	VCB = 20 V, IC = 0
DC current transfer ratio			h *1	60	—	320		V	CE	= 3 V, I = 10 mA
			FE1							C
								(Pulse test)
			hFE2	10	—	—		V	CE = 3 V, IC = 500 mA
								(Pulse test)
Collector to emitter saturation			VCE(sat)	—	0.2	0.6	V	I C = 150 mA, IB = 15 mA
voltage								(Pulse test)
Base to emitter voltage			VBE	—	0.64	—	V	V	CE = 3 V, IC = 10 mA
								(Pulse test)
Note: 1. The 2SC2618 is grouped by hFE1 as follows.
Grade	B	C		D
Mark	RB	RC		RD
hFE1	60 to 120	100 to 200		160 to 320

See characteristic curves of 2SC1213.

2