HIT 2SC2618 Datasheet

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HIT 2SC2618 Datasheet

2SC2618

Silicon NPN Epitaxial

Application

Low frequency amplifier

Complementary pair with 2SA1121

Outline

MPAK

3

 

1

Emitter

 

1.

2

2.

Base

3.

Collector

 

2SC2618

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

35

V

Collector to emitter voltage

VCEO

35

V

Emitter to base voltage

VEBO

4

V

Collector current

IC

500

mA

 

 

 

 

Collector power dissipation

PC

150

mW

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

 

V(BR)CBO

35

V

I

C = 10 A, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

35

V

I

C = 1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

 

V(BR)EBO

4

V

I

E = 10 A, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

 

ICBO

0.5

A

VCB = 20 V, IC = 0

DC current transfer ratio

 

h *1

60

320

 

V

CE

= 3 V, I = 10 mA

 

 

 

FE1

 

 

 

 

 

C

 

 

 

 

 

 

 

 

(Pulse test)

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE2

10

 

V

CE = 3 V, IC = 500 mA

 

 

 

 

 

 

 

 

(Pulse test)

 

 

 

 

 

 

 

Collector to emitter saturation

VCE(sat)

0.2

0.6

V

I C = 150 mA, IB = 15 mA

voltage

 

 

 

 

 

 

 

(Pulse test)

 

 

 

 

 

 

 

 

 

Base to emitter voltage

 

VBE

0.64

V

V

CE = 3 V, IC = 10 mA

 

 

 

 

 

 

 

 

(Pulse test)

 

 

 

 

 

 

Note: 1. The 2SC2618 is grouped by hFE1 as follows.

 

 

 

 

 

Grade

B

C

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mark

RB

RC

RD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE1

60 to 120

100 to 200

160 to 320

 

 

 

 

 

See characteristic curves of 2SC1213.

2

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