HIT 2SC2611 Datasheet

2SC2611

Silicon NPN Triple Diffused

Application

High voltage amplifier TV VIDEO output

Outline

TO-126 MOD

1.	Emitter
2.	Collector
3.	Base

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Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	300	V
Collector to emitter voltage	VCEO	300	V
Emitter to base voltage	VEBO	5	V
Collector current	IC	100	mA
Collector power dissipation	PC	1.25	W
Junction temperature	Tj	150	°C

Storage temperature

Tstg

–55 to +150

°C

2SC2611

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit		Test conditions
Collector to base breakdown	V(BR)CBO	300	—	—	V	I	C = 10 A, IE = 0
voltage
Collector to emitter breakdown	V(BR)CEO	300	—	—	V	I	C = 1 mA, RBE = ∞
voltage
Emitter to base breakdown	V(BR)EBO	5	—	—	V	I	E = 10 A, IC = 0
voltage
Collector cutoff current	ICEO	—	—	1.0	A		VCE =	250 V, RBE = ∞
DC current transfer ratio	hFE	30	—	200		V CE =		20	V, IC = 20 mA
Collector to emitter saturation	VCE(sat)	—	—	1.5	V	I	C = 20 mA, IB = 2 mA
voltage
Gain bandwidth product	fT	50	80	—	MHz	V CE =		20	V, IC = 20 mA
Collector output capacitance	Cob	—	—	4.0	pF	V	CB =	20	V, IE = 0, f = 1 MHz

		Maximum Collector Dissipation Curve
	1.5
(W)
Pc				(mA)
powerCollectordissipation	1.0			CollectorCurrent I
				C
	0.5
	0	50	100	150
		Ambient Temperature TC (°C)

		Typical Output Characteristics
1.0
										16
0.8								14
								12
0.6								10
0.4									8
									6
									4
0.2									2 μA
						IB	= 0
0	0.4			0.8				1.2										1.6		2.0
	Collector to emitter Voltage																	VCE (V)

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