HIT 2SC2547, 2SC2546, 2SC2545 Datasheet

0 (0)
2SC2545, 2SC2546, 2SC2547
Silicon NPN Epitaxial
Application
Low frequency low noise amplifier
Complementary pair with 2SA1083, 2SA1084 and 2SA1085
Outline
1. Emitter
2. Collector
TO-92 (1)
3
2
1
2SC2545, 2SC2546, 2SC2547
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC2545 2SC2546 2SC2547 Unit
Collector to base voltage V
CBO
60 90 120 V
Collector to emitter voltage V
CEO
60 90 120 V
Emitter to base voltage V
EBO
555V
Collector current I
C
100 100 100 mA
Emitter current I
E
–100 –100 –100 mA
Collector power dissipation P
C
400 400 400 mW
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
2SC2545, 2SC2546, 2SC2547
3
Electrical Characteristics (Ta = 25°C)
2SC2545 2SC2546 2SC2547
Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
60 90 120 V I
C
= 10 µA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
60 90 120 V I
C
= 1 mA,
R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5—5——5—VI
E
= 10 µA, I
C
= 0
Collector cutoff current I
CBO
0.1 0.1 0.1 µAV
CB
= 50 V, I
E
= 0
Emitter cutoff current I
EBO
0.1 0.1 0.1 µAV
EB
= 2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
250 1200 250 1200 250 800 V
CE
= 12 V,
I
C
= 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
0.2 0.2 0.2 V I
C
= 10 mA,
I
B
= 1 mA
Base to emitter voltage V
BE
0.6 0.6 0.6 V V
CE
= 12 V,
I
C
= 2 mA
Gain bandwidth product f
T
—90 —90 —90 MHzV
CE
= 12 V,
I
C
= 2 mA
Collector output
capacitance
Cob 3.0 3.0 3.0 pF V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Noise voltage referred
input
e
n
0.5 0.5 0.5 nV/
Hz
V
CE
= 6V,
I
C
= 10 mA,
f = 1 kHz,
R
g
= 0, f = 1Hz
Note: 1. The 2SC2545, 2SC2546 and 2SC2547 are grouped by h
FE
as follows.
DEF
2SC2545, 2SC2546 250 to 500 400 to 800 600 to 1200
2SC2547 250 to 500 400 to 800
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