HIT 2SC2547, 2SC2546, 2SC2545 Datasheet

Loading...
HIT 2SC2547, 2SC2546, 2SC2545 Datasheet

2SC2545, 2SC2546, 2SC2547

Silicon NPN Epitaxial

Application

Low frequency low noise amplifier

Complementary pair with 2SA1083, 2SA1084 and 2SA1085

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SC2545, 2SC2546, 2SC2547

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

 

2SC2545

2SC2546

2SC2547

Unit

Collector to base voltage

VCBO

60

 

 

 

 

 

 

 

90

120

V

Collector to emitter voltage

VCEO

60

 

 

 

 

 

 

 

90

120

V

Emitter to base voltage

VEBO

5

 

 

 

 

 

 

 

 

 

5

5

V

Collector current

IC

100

 

 

 

 

 

 

100

100

mA

 

 

 

 

 

 

 

Emitter current

IE

 

–100

–100

–100

mA

 

 

 

 

 

 

 

 

 

 

 

 

Collector power dissipation

PC

400

 

 

 

 

 

 

400

400

mW

 

 

 

 

 

 

 

 

 

 

 

 

Junction temperature

Tj

150

 

 

 

 

 

 

150

150

°C

Storage temperature

Tstg

 

–55 to +150

–55 to +150

–55 to +150

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

2SC2545, 2SC2546, 2SC2547

Electrical Characteristics (Ta = 25°C)

 

 

2SC2545

 

2SC2546

 

2SC2547

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Min Typ

Max

Min

Typ

Max

Unit

Test conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to base

V(BR)CBO

60

90

120

V

I

C = 10 µA, IE = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

V(BR)CEO

60

90

120

V

I

C = 1 mA,

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

RBE = ∞

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base

V(BR)EBO

5

5

5

V

I

E = 10 µA, IC = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

0.1

0.1

0.1

 

µA

VCB =

50

V, IE = 0

Emitter cutoff current

IEBO

0.1

0.1

0.1

 

µA

VEB =

2 V, IC = 0

DC current transfer ratio

hFE*1

250

1200

250

1200 250 —

800

V

CE =

12

V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = 2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

VCE(sat)

0.2

0.2

0.2

V

I

C = 10 mA,

saturation voltage

 

 

 

 

 

 

 

 

 

 

 

 

IB = 1 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

VBE

0.6

0.6

0.6

V

V

CE =

12

V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = 2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

90

90

90

MHz

V

CE =

12

V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = 2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector output

Cob

3.0

3.0

3.0

pF

V

CB =

10

V, IE = 0,

capacitance

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Noise voltage referred

en

0.5

0.5

0.5

nV/

√Hz

VCE = 6V,

input

 

 

 

 

 

 

 

 

 

 

 

IC = 10 mA,

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 kHz,

 

 

 

 

 

 

 

 

 

 

 

 

 

Rg = 0,

f = 1Hz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note: 1. The 2SC2545, 2SC2546 and 2SC2547 are grouped by hFE as follows.

 

D

E

 

F

2SC2545, 2SC2546

250 to 500

400 to 800

 

600 to 1200

 

 

 

 

 

2SC2547

250 to 500

400 to 800

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

+ 5 hidden pages