HIT 2SC2396, 2SC2544, 2SC2543 Datasheet

2SC2396, 2SC2543, 2SC2544

Silicon NPN Epitaxial

Application

•Low frequency amplifier

•Complementary pair with 2SA1025, 2SA1081 and 2SA1082

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SC2396, 2SC2543, 2SC2544

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	2SC2396	2SC2543	2SC2544	Unit
Collector to base voltage	VCBO	60	90	120	V
Collector to emitter voltage	VCEO	60	90	120	V
Emitter to base voltage	VEBO	5	5	5	V
Collector current	IC	100	100	100	mA
Emitter current	IE	–100	–100	–100	mA
Collector power dissipation	PC	400	400	400	mW
Junction temperature	Tj	150	150	150	°C
Storage temperature	Tstg	–55 to +150	–55 to +150	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

		2SC2396			2SC2543				2SC2544
Item	Symbol	Min	Typ	Max	Min Typ Max				Min	Typ	Max	Unit	Test conditions
Collector to base	V(BR)CBO	60	—	—	90	—	—	120	—	—	V	I	C = 10 A, IE = 0
breakdown voltage
Collector to emitter	V(BR)CEO	60	—	—	90	—	—	120	—	—	V	I	C = 1 mA,
breakdown voltage													RBE = ∞
Emitter to base	V(BR)EBO	5	—	—	5	—	—	5	—	—	V	I	E = 10 A, IC = 0
breakdown voltage
Collector cutoff current	ICBO	—	—	0.1	—	—	0.1	—	—	0.1		A	VCB =	50 V, IE = 0
Emitter cutoff current	IEBO	—	—	0.1	—	—	0.1	—	—	0.1		A	VEB =	2 V, IC = 0
DC current transfer ratio	hFE*1	250	—	1200	250	—	1200	250 —		800		V	CE =	12 V,
													IC = 2 mA
Collector to emitter	VCE(sat)	—	—	0.2	—	—	0.2	—	—	0.2	V	I	C = 10 mA,
saturation voltage													IB = 1 mA
Base to emitter voltage	VBE	—	0.6	—	—	0.6	—	—	0.6	—	V	V	CE =	12 V,
													IC = 2 mA
Gain bandwidth product	fT	—	90	—	—	90	—	—	90	—	MHz	V	CE =	12 V,
													IC = 2 mA
Collector output	Cob	—	3.0	—	—	3.0	—	—	3.0	—	pF	V	CB =	10 V, IE = 0,
capacitance													f = 1 MHz

Note: 1. The 2SC2396, 2SC2543 and 2SC2544 are grouped by hFE1 as follows.

	D	E	F
2SC2396, 2SC2543	250 to 500	400 to 800	600 to 1200
2SC2544	250 to 500	400 to 800	—

See characteristic curves of 2SC2545, 2SC2546 and 2SC2547.

2