HIT 2SC2463 Datasheet

Loading...
HIT 2SC2463 Datasheet

2SC2463

Silicon NPN Epitaxial

Application

Low frequency amplifier

Outline

MPAK

3

 

1

Emitter

 

1.

2

2.

Base

3.

Collector

 

2SC2463

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

55

V

Collector to emitter voltage

VCEO

50

V

Emitter to base voltage

VEBO

5

V

Collector current

IC

100

mA

 

 

 

 

Collector power dissipation

PC

150

mW

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

 

V(BR)CBO

55

V

I

C = 10 A, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

50

V

I

C = 1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

 

V(BR)EBO

5

V

I

E = 10 A, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

 

ICBO

0.5

A

VCB = 30 V, IE = 0

Emitter cutoff current

 

IEBO

0.5

A

VEB = 2 V, IC = 0

DC current transfer ratio

 

h *1

250

1200

 

V

CE

= 12 V, I = 2 mA

 

 

 

FE

 

 

 

 

 

C

Collector to emitter saturation

VCE(sat)

0.5

V

I

C = 10 mA, IB = 1 mA

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

 

VBE

0.75

V

V

CE = 12 V, IC = 2 mA

Note: 1. The 2SC2463 is grouped by hFE as follows.

 

 

 

 

 

Grade

D

E

 

F

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mark

DD

DE

DF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE

250 to 500

400 to 800

600 to 1200

 

 

 

 

 

See characteristic curves of 2SC1345.

2

+ 3 hidden pages