HIT 2SC2396, 2SC2544, 2SC2543 Datasheet

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HIT 2SC2396, 2SC2544, 2SC2543 Datasheet

2SC2396, 2SC2543, 2SC2544

Silicon NPN Epitaxial

Application

Low frequency amplifier

Complementary pair with 2SA1025, 2SA1081 and 2SA1082

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SC2396, 2SC2543, 2SC2544

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SC2396

2SC2543

2SC2544

Unit

Collector to base voltage

VCBO

60

90

120

V

Collector to emitter voltage

VCEO

60

90

120

V

Emitter to base voltage

VEBO

5

5

5

V

Collector current

IC

100

100

100

mA

 

 

 

 

 

 

Emitter current

IE

–100

–100

–100

mA

 

 

 

 

 

 

Collector power dissipation

PC

400

400

400

mW

 

 

 

 

 

 

Junction temperature

Tj

150

150

150

°C

Storage temperature

Tstg

–55 to +150

–55 to +150

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

 

 

2SC2396

 

2SC2543

 

2SC2544

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Min Typ Max

Min

Typ

Max

Unit

Test conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to base

V(BR)CBO

60

90

120

V

I

C = 10 A, IE = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

V(BR)CEO

60

90

120

V

I

C = 1 mA,

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

RBE =

Emitter to base

V(BR)EBO

5

5

5

V

I

E = 10 A, IC = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

0.1

0.1

0.1

 

A

VCB =

50 V, IE = 0

Emitter cutoff current

IEBO

0.1

0.1

0.1

 

A

VEB =

2 V, IC = 0

DC current transfer ratio

hFE*1

250

1200

250

1200

250 —

800

V

CE =

12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = 2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

VCE(sat)

0.2

0.2

0.2

V

I

C = 10 mA,

saturation voltage

 

 

 

 

 

 

 

 

 

 

 

 

IB = 1 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

VBE

0.6

0.6

0.6

V

V

CE =

12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = 2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

90

90

90

MHz

V

CE =

12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = 2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector output

Cob

3.0

3.0

3.0

pF

V

CB =

10 V, IE = 0,

capacitance

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

Note: 1. The 2SC2396, 2SC2543 and 2SC2544 are grouped by hFE1 as follows.

 

D

E

F

2SC2396, 2SC2543

250 to 500

400 to 800

600 to 1200

 

 

 

 

2SC2544

250 to 500

400 to 800

 

 

 

 

See characteristic curves of 2SC2545, 2SC2546 and 2SC2547.

2

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