HIT 2SC458LG, 2SC2310 Datasheet

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2SC458 (LG), 2SC2310
Silicon NPN Epitaxial
Application
Low frequency low noise amplifier
Complementary pair with 2SA1031 and 2SA1032
Outline
1. Emitter
2. Collector
TO-92 (1)
3
2
1
2SC458 (LG), 2SC2310
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC458 (LG) 2SC2310 Unit
Collector to base voltage V
CBO
30 55 V
Collector to emitter voltage V
CEO
30 50 V
Emitter to base voltage V
EBO
55V
Collector current I
C
100 100 mA
Emitter current I
E
–100 –100 mA
Collector power dissipation P
C
200 200 mW
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
2SC458 (LG), 2SC2310
3
Electrical Characteristics (Ta = 25°C)
2SC458 (LG) 2SC2310
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30 55 V I
C
= 10 µA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30 50 V I
C
= 1 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5 —5 ——V I
E
= 10 µA, I
C
= 0
Collector cutoff current I
CBO
0.5 0.5 µAV
CB
=18 V, I
E
= 0
Emitter cutoff current I
EBO
0.5 0.5 µAV
EB
= 2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
100 500 100 320 V
CE
= 12 V, I
C
= 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
0.2 0.2 V I
C
= 10 mA, I
B
= 1 mA
Base to emitter voltage V
BE
0.67 0.75 0.67 0.75 V V
CE
= 12 V, I
C
= 2 mA
Gain bandwidth product f
T
230 230 MHz V
CE
= 12 V, I
C
= 2 mA
Collector output
capacitance
Cob 1.8 3.5 1.8 3.5 pF V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Noise figure NF 3 5 3 5 dB V
CE
= 6 V, I
C
= 0.1 mA,
f = 120 Hz, R
g
= 500
Small signal input
impedance
h
ie
16.5 16.5 k V
CE
= 5V, I
C
= 0.1mA,
f = 270 Hz
Small signal voltage
feedback ratio
h
re
70——70× 10
–6
Small signal current
transfer ratio
h
fe
130 130
Small signal output
admittance
h
oe
11.0 11.0 µS
Note: 1. The 2SC458 (LG) and 2SC2310 are grouped by h
FE
as follows.
BCD
2SC458 (LG) 100 to 200 160 to 320 250 to 500
2SC2310 100 to 200 160 to 320
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