
2SC458 (LG), 2SC2310
Silicon NPN Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SA1031 and 2SA1032
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1

2SC458 (LG), 2SC2310
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC458 (LG) 2SC2310 Unit
Collector to base voltage V
CBO
30 55 V
Collector to emitter voltage V
CEO
30 50 V
Emitter to base voltage V
EBO
55V
Collector current I
C
100 100 mA
Emitter current I
E
–100 –100 mA
Collector power dissipation P
C
200 200 mW
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C

2SC458 (LG), 2SC2310
3
Electrical Characteristics (Ta = 25°C)
2SC458 (LG) 2SC2310
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30 — — 55 — — V I
C
= 10 µA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30 — — 50 — — V I
C
= 1 mA, R
BE
= ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5 ——5 ——V I
E
= 10 µA, I
C
= 0
Collector cutoff current I
CBO
— — 0.5 — — 0.5 µAV
CB
=18 V, I
E
= 0
Emitter cutoff current I
EBO
— — 0.5 — — 0.5 µAV
EB
= 2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
100 — 500 100 — 320 V
CE
= 12 V, I
C
= 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
— — 0.2 — — 0.2 V I
C
= 10 mA, I
B
= 1 mA
Base to emitter voltage V
BE
— 0.67 0.75 — 0.67 0.75 V V
CE
= 12 V, I
C
= 2 mA
Gain bandwidth product f
T
— 230 — — 230 — MHz V
CE
= 12 V, I
C
= 2 mA
Collector output
capacitance
Cob — 1.8 3.5 — 1.8 3.5 pF V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Noise figure NF — 3 5 — 3 5 dB V
CE
= 6 V, I
C
= 0.1 mA,
f = 120 Hz, R
g
= 500 Ω
Small signal input
impedance
h
ie
— 16.5 — — 16.5 — kΩ V
CE
= 5V, I
C
= 0.1mA,
f = 270 Hz
Small signal voltage
feedback ratio
h
re
—70——70—× 10
–6
Small signal current
transfer ratio
h
fe
— 130 — — 130 —
Small signal output
admittance
h
oe
— 11.0 — — 11.0 — µS
Note: 1. The 2SC458 (LG) and 2SC2310 are grouped by h
FE
as follows.
BCD
2SC458 (LG) 100 to 200 160 to 320 250 to 500
2SC2310 100 to 200 160 to 320 —