HIT 2SC1890A Datasheet

2SC1890, 2SC1890A

Silicon NPN Epitaxial

Application

•Low frequency high voltage amplifier

•Complementary pair with 2SA893/A

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SC1890, 2SC1890A

Absolute Maximum Ratings (Ta = 25°C)

		Ratings
Item	Symbol	2SC1890	2SC1890A	Unit
Collector to base voltage	VCBO	90	120	V
Collector to emitter voltage	VCEO	90	120	V
Emitter to base voltage	VEBO	5	5	V
Collector current	IC	50	50	mA
Collector power dissipation	PC	300	300	mW
Junction temperature	Tj	150	150	°C
Storage temperature	Tstg	–55 to +150	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

		2SC1890			2SC1890A
Item	Symbol	Min	Typ	Max Min Typ Max Unit								Test conditions
Collector to emitter	V(BR)CEO	90	—	—	120	—	—	V		I		C = 1 mA, RBE = ∞
breakdown voltage
Collector cutoff current	ICBO	—	—	0.5	—	—	—		µA			VCB =		75	V, IE = 0
		—	—	—	—	—	0.5		µA			VCB =		100 V, IE = 0
DC current tarnsfer ratio h *1		250	—	1200	250	—	1200				V	CE	=	12	V, I	C	= 2 mA
	FE
Base to emitter voltage	VBE	—	—	0.75	—	—	0.75	V		V		CE =		12	V, IC = 2 mA
Collector to emitter	VCE(sat)	—	—	0.5	—	—	0.5	V		I		C = 10 mA, IB = 1 mA
saturation voltage
Gain bandwidth product	fT	—	200	—	—	200	—	MHz		V		CE =		12	V, IC = 2 mA
Collector output	Cob	—	1.6	—	—	1.6	—	pF		V		CB =		25	V, IE = 0,
capacitance												f = 1 MHz
Noise figure	NF	—	2	10	—	2	10	dB			V	CE =		6 V, IC = 50 µA,
												Rg = 50 kΩ, f = 1 kHz

Note: 1. The 2SC1890/A is grouped by hFE as follows.

D	E	F
250 to 500	400 to 800	600 to 1200

See characteristic curves of 2SC1775 and 2SC1775A.

2