HIT 2SC1472 Datasheet

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HIT 2SC1472 Datasheet

2SC1472(K)

Silicon NPN Epitaxial, Darlington

Application

High gain amplifier

Outline

TO-92 (1)

1.Emitter

2.Collector

3.Base

3

2

1

3

2

1

2SC1472 (K)

Absolute Maximum Ratings (Ta = 25°C)

Item

 

 

Symbol

 

Ratings

Unit

Collector to base voltage

 

 

VCBO

40

V

Collector to emitter voltage

 

 

VCEO

30

V

Emitter to base voltage

 

 

VEBO

10

V

Collector current

 

 

IC

300

mA

 

 

 

 

 

 

Collector peak current

 

 

iC(peak)

500

mA

Collector power dissipation

 

 

PC

500

mW

 

 

 

 

 

 

Junction temperature

 

 

Tj

150

°C

Storage temperature

 

 

Tstg

 

–55 to +150

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

2SC1472 (K)

Electrical Characteristics (Ta = 25°C)

Item

 

Symbol

Min

Typ

Max

Unit

 

 

Test conditions

Collector to emitter breakdown

V(BR)CEO

30

V

I

C = 1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

100

nA

V

CB = 30 V, IE = 0

Emitter cutoff current

IEBO

100

nA

V

EB = 10 V, IC = 0

DC current transfer ratio

h *1

2000

100000

 

I

C

= 10 mA, V

CE

= 5 V

 

 

FE1

 

 

 

 

 

 

 

 

 

 

hFE2*1

3000

 

I

C = 100 mA, VCE = 5 V

 

 

 

 

 

 

 

 

 

(Pulse Test)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE3*1

3000

 

I

C = 400 mA, VCE = 5 V

 

 

 

 

 

 

 

 

 

(Pulse Test)

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter saturation

VCE(sat)

1.5

V

I

C = 100 mA, IB = 0.1 mA

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

VBE(sat)

2.0

V

I

C = 100 mA, IB = 0.1 mA

Gain bandwidth product

fT

50

MHz

V

CE = 5 V, IC = 10 mA

 

 

 

 

 

 

 

 

 

Collector output capacitance

Cob

10

pF

V

CB = 10 V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

Turn on time

 

ton

60

ns

V

CC = 11 V

 

 

 

 

 

 

 

 

 

 

 

IC = 100 IB1 = 100 mA

 

 

 

 

 

 

 

 

 

IB2 = –IB1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn off time

 

toff

800

ns

 

 

 

 

 

 

Storage time

 

tstg

350

ns

 

 

 

 

 

 

Note: 1. The 2SC1472(K) is grouped by hFE as follows.

 

 

 

 

 

 

 

 

 

A

B

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE1

2000 to 100000

5000 to 100000

 

 

 

 

 

 

 

 

 

hFE2

3000 min

10000 min

 

 

 

 

 

 

 

 

 

 

hFE3

3000 min

10000 min

 

 

 

 

 

 

 

 

 

 

P.G.

tr, tf 15 ns PW 10 μs duty ratio 10%

Switching Time Test Circuit

 

Response Waveform

 

 

 

 

6 k

D.U.T.

 

CRT

 

 

 

 

 

 

13 V

 

90%

 

 

 

100

 

 

 

 

Input

 

 

6 k

 

10%

 

 

 

 

0

 

50

0.002

0.002

 

 

 

– +

– +

 

Output

90%

90%

 

 

10%

 

–6 V

50

50

11 V

0

10%

 

 

 

Unit R : Ω

 

td

tstg

 

 

 

C : μF

 

ton

toff

3

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