HIT 2SC1162 Datasheet

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2SC1162

Silicon NPN Epitaxial

Application

Low frequency power amplifier complementary pair with 2SA715

Outline

TO-126 MOD

1.

Emitter

2.

Collector

3.

Base

1

2 3

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

35

V

Collector to emitter voltage

VCEO

35

V

Emitter to base voltage

VEBO

5

V

Collector current

IC

2.5

A

 

 

 

 

Collector peak current

IC(peak)

3

A

Collector power dissipation

PC

0.75

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PC*1

10

W

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note: 1. Value at TC = 25°C.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

HIT 2SC1162 Datasheet

2SC1162

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

 

Collector to base breakdown

 

V(BR)CBO

35

V

I

C = 1 mA, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

35

V

I

C = 10 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

 

V(BR)EBO

5

V

I

E = 1 mA, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

 

ICBO

20

A

VCB =

35 V, IE = 0

 

DC current transfer ratio

 

h *1

60

320

 

V

CE

=

2 V, I = 0.5 A

 

 

 

FE

 

 

 

 

 

 

C

 

 

 

 

hFE

20

 

V

CE =

2 V, IC = 1.5 A

 

 

 

 

 

 

 

 

(pulse test)

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

 

VBE

0.93

1.5

V

V CE =

2 V, IC = 1.5 A

 

 

 

 

 

 

 

 

(pulse test)

 

 

 

 

 

 

 

 

Collector to emitter saturation

VCE(sat)

0.5

1.0

V

I C = 2 A, IB = 0.2 A (pulse test)

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

 

fT

180

MHz

V

CE =

2 V, IC = 0.2 A

Note: 1. The 2SC1162 is grouped by hFE as follows.

 

 

 

 

 

 

 

B

C

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

60 to 120

100 to 200

160 to 320

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector power dissipation PC (W)

Maximum Collector Dissipation Curve

0.8

0.75

0.6

0.4

0.2

0

50

100

150

200

 

 

 

 

 

 

 

 

 

 

Ambient temperature

Ta (°C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Area of Safe Operation

5

TC = 25°C

IC(max)(DC Operation)

(A)

2

 

 

P

 

 

C

 

 

 

 

 

 

 

 

C

 

 

I

 

 

 

=

 

 

 

 

 

 

 

 

current

1.0

 

 

10

 

 

 

 

W

 

 

 

 

 

 

 

0.5

 

 

 

 

 

Collector

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

5

 

20

50

 

1

2

10

 

 

Collector to emitter voltage

VCE (V)

 

2

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