HIT 2SB955(K) Datasheet

2SB955(K)

Silicon PNP Triple Diffused

Application

Power switching complementary pair with 2SD1126(K)

Outline

TO-220AB

		1.	Base
		2.	Collector
	1		(Flange)
		3.	Emitter
	2
		3

	2
1
	ID
1.0 kΩ	200 Ω
(Typ)	(Typ)

3

2SB955(K)

Absolute Maximum Ratings (Ta = 25°C)

Item		Symbol	Rating	Unit
Collector to base voltage		VCBO	–120	V
Collector to emitter voltage		VCEO	–120	V
Emitter to base voltage		VEBO	–7	V
Collector current		IC	–10	A
Collector peak current		IC(peak)	–15	A
C to E diode forward current		ID*1	10	A
Collector power dissipation		PC*2	50	W
Junction temperature		Tj	150	°C
Storage temperature		Tstg	–55 to +150	°C
Notes: 1.	Value at TC = 25°C
2.	PW ≤ 1 ms 1 shot

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown

V(BR)CEO

–120

—

—

V

I

C = –25 mA, RBE = ∞

voltage

Emitter to base breakdown

V(BR)EBO

–7

—

—

V

I

E = –200 mA, IC = 0

voltage

Collector cutoff current

ICBO

—

—

–100

A

VCB = –120 V, IE = 0

ICEO

—

—

–10

A

VCE = –100 V, RBE = ∞

DC current transfer ratio

h

1000

—

20000

V

CE

= –3 V, I = –5 A*1

FE

C

Collector to emitter saturation

V

CE(sat)1

—

—

–1.5

V

I

C

= –5 A, I = –10 mA*1

B

voltage

V

CE(sat)2

—

—

–3.0

V

I

C

= –10 A, I = –0.1 A*1

B

Base to emitter saturation

V

BE(sat)1

—

—

–2.0

V

I

C

= –5 A, I = –10 mA*1

B

voltage

V

BE(sat)2

—

—

–3.5

V

I

C

= –10 A, I = –0.1 A*1

B

C to E diode forward voltage

V

D

—

—

3.0

V

I

D

= 10 A*1

Turn on time

ton

—

0.8

—

s

VCC = –30 V

Turn off time

toff

—

4.0

—

s

IC = –5 A, IB1 = –IB2 = –10 mA

Note: 1. Pulse test

2