HIT 2SB955(K) Datasheet

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HIT 2SB955(K) Datasheet

2SB955(K)

Silicon PNP Triple Diffused

Application

Power switching complementary pair with 2SD1126(K)

Outline

TO-220AB

 

1.

Base

 

2.

Collector

1

 

(Flange)

3.

Emitter

2

3

 

 

2

1

 

 

ID

1.0 kΩ

200 Ω

(Typ)

(Typ)

3

2SB955(K)

Absolute Maximum Ratings (Ta = 25°C)

Item

 

Symbol

Rating

Unit

Collector to base voltage

VCBO

–120

V

Collector to emitter voltage

VCEO

–120

V

Emitter to base voltage

VEBO

–7

V

Collector current

IC

–10

A

 

 

 

 

Collector peak current

IC(peak)

–15

A

C to E diode forward current

ID*1

10

A

 

 

 

 

Collector power dissipation

PC*2

50

W

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1.

Value at TC = 25°C

 

 

 

2.

PW 1 ms 1 shot

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

 

 

 

Typ

 

 

 

 

 

Max

 

Unit

 

Test conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–120

 

 

 

 

 

 

V

I

 

 

C = –25 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–7

 

 

 

 

 

 

V

I

 

 

E = –200 mA, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

 

 

 

–100

 

A

 

VCB = –120 V, IE = 0

 

ICEO

 

 

 

–10

 

A

 

VCE = –100 V, RBE =

DC current transfer ratio

h

 

1000

 

 

 

 

 

20000

 

 

V

CE

= –3 V, I = –5 A*1

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

Collector to emitter saturation

V

CE(sat)1

 

 

 

–1.5

V

I

 

 

C

= –5 A, I = –10 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

voltage

V

CE(sat)2

 

 

 

–3.0

V

I

 

 

C

= –10 A, I = –0.1 A*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

Base to emitter saturation

V

BE(sat)1

 

 

 

–2.0

V

I

 

 

C

= –5 A, I = –10 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

voltage

V

BE(sat)2

 

 

 

–3.5

V

I

 

 

C

= –10 A, I = –0.1 A*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

C to E diode forward voltage

V

D

 

 

3.0

V

I

 

 

D

= 10 A*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn on time

ton

0.8

 

 

 

 

 

s

 

VCC = –30 V

Turn off time

toff

4.0

 

 

 

 

 

s

 

IC = –5 A, IB1 = –IB2 = –10 mA

Note: 1. Pulse test

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

+ 4 hidden pages