HIT 2SB861 Datasheet

2SB861

Silicon PNP Triple Diffused

Application

Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138

Outline

TO-220AB

		1.	Base
		2.	Collector
	1		(Flange)
		3.	Emitter
	2
		3

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Rating

Unit

Collector to base voltage

VCBO

–200

V

Collector to emitter voltage

VCEO

–150

V

Emitter to base voltage

VEBO

–6

V

Collector current

IC

–2

A

Collector peak current

IC(peak)

–5

A

Collector power dissipation

PC

1.8

W

PC*1

30

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–45 to +150

°C

Note: 1. Value at TC = 25°C

2SB861

Electrical Characteristics (Ta = 25°C)

Item			Symbol		Min	Typ	Max	Unit	Test conditions
Collector to emitter breakdown			V(BR)CBO		–150	—	—	V	I	C = –50 mA, RBE = ∞
voltage
Emitter to base breakdown			V(BR)EBO		–6	—	—	V	I	E = –5 mA, IC = 0
voltage
Collector cutoff current			ICBO		—	—	–1	A	VCB = –120 V, IE = 0
DC current transfer ratio			h *1		60	—	200		V	CE	= –4 V, I = –50 mA
				FE1							C
			h	FE2	60	—	—		V	CE	= –10 V, I = –500 mA*2
											C
Collector to emitter saturation			VCE(sat)		—	—	–3	V	I	C = –500 mA, IB = –50 mA
voltage
Base to emitter voltage			VBE		—	—	–1	V	V	CE = –4 V, IC = –50 mA
Collector output capacitance			Cob		—	30	—	pF	V	CB = –100 V, IE = 0,
									f = 1 MHz
Notes: 1. The 2SB861 is grouped by hFE1 as follows.
2.	Pulse test
B	C
60 to 120	100 to 200

Collector power dissipation Pc (W)

Maximum Collector Dissipation Curve

40

30
20
				T
				C
10
		1.8 W		Ta
0	50			100	150	200

Ambient temperature Ta (°C)

Case temperature TC (°C)

Area of Safe Operation

	–10
(A)	–5 IC (max) (Continuous)
	–2			DC
I
C		(–15 V, –2 A)		Operation
Current
	–1.0
	–0.5				(T
Collector					C
						=
			(–60 V, –0.4 A)			25
						°
	–0.2					C)
	–0.1		(–150 V, –65 mA)
	–0.05
	–2	–5	–10	–20	–50 –100 –200

Collector to emitter Voltage VCE (V)

2