HIT 2SB861 Datasheet

Loading...

2SB861

Silicon PNP Triple Diffused

Application

Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138

Outline

TO-220AB

 

1.

Base

 

2.

Collector

1

 

(Flange)

3.

Emitter

2

3

 

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Rating

Unit

Collector to base voltage

VCBO

–200

V

Collector to emitter voltage

VCEO

–150

V

Emitter to base voltage

VEBO

–6

V

Collector current

IC

–2

A

 

 

 

 

Collector peak current

IC(peak)

–5

A

Collector power dissipation

PC

1.8

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PC*1

30

W

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–45 to +150

°C

Note: 1. Value at TC = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

HIT 2SB861 Datasheet

2SB861

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown

V(BR)CBO

–150

V

I

C = –50 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–6

V

I

E = –5 mA, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–1

A

VCB = –120 V, IE = 0

DC current transfer ratio

h *1

60

200

 

V

CE

= –4 V, I = –50 mA

 

 

 

 

FE1

 

 

 

 

 

C

 

 

 

h

FE2

60

 

V

CE

= –10 V, I = –500 mA*2

 

 

 

 

 

 

 

 

 

C

Collector to emitter saturation

VCE(sat)

–3

V

I

C = –500 mA, IB = –50 mA

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

VBE

–1

V

V

CE = –4 V, IC = –50 mA

Collector output capacitance

Cob

30

pF

V

CB = –100 V, IE = 0,

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

 

 

 

 

 

Notes: 1. The 2SB861 is grouped by hFE1 as follows.

 

 

 

 

 

2.

Pulse test

 

 

 

 

 

 

 

 

 

B

C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

60 to 120

100 to 200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector power dissipation Pc (W)

Maximum Collector Dissipation Curve

40

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.8 W

Ta

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

50

100

150

200

Ambient temperature Ta (°C)

Case temperature TC (°C)

Area of Safe Operation

 

–10

 

 

 

 

 

(A)

–5 IC (max) (Continuous)

 

 

–2

 

 

DC

 

 

I

 

 

 

 

 

 

 

 

 

C

 

(–15 V, –2 A)

Operation

 

Current

 

 

–1.0

 

 

 

 

–0.5

 

 

 

(T

 

Collector

 

 

 

C

 

 

 

 

 

=

 

 

 

(–60 V, –0.4 A)

25

 

 

 

°

 

–0.2

 

 

 

 

C)

 

 

 

 

 

 

 

–0.1

 

(–150 V, –65 mA)

 

 

 

 

–0.05

 

 

 

 

 

 

–2

–5

–10

–20

–50 –100 –200

Collector to emitter Voltage VCE (V)

2

+ 3 hidden pages