HIT 2SB859 Datasheet

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2SB859

Silicon PNP Triple Diffused

Application

Low frequency power amplifier complementary pair with 2SD1135

Outline

TO-220AB

 

1.

Base

 

2.

Collector

1

 

(Flange)

3.

Emitter

2

3

 

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Rating

Unit

Collector to base voltage

VCBO

–100

V

Collector to emitter voltage

VCEO

–80

V

Emitter to base voltage

VEBO

–5

V

Collector current

IC

–4

A

 

 

 

 

Collector peak current

IC(peak)

–8

A

Collector power dissipation

PC*1

40

W

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–45 to +150

°C

Note: 1. Value at TC = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

HIT 2SB859 Datasheet

2SB859

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown

V(BR)CEO

–80

V

I

C = –50 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–5

V

I

E = –10 A, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–0.1

mA

V

CB = –80 V, IE = 0

DC current transfer ratio

h *1

60

200

 

V

CE

= –5 V, I = –1 A*2

 

 

 

 

 

FE1

 

 

 

 

 

C

 

 

 

h

FE2

35

 

V

CE

= –5 V, I = –0.1 A*2

 

 

 

 

 

 

 

 

 

 

C

Base to emitter voltage

V

BE

–1.5

V

V

CE

= –5 V, I = –1 A*2

 

 

 

 

 

 

 

 

 

 

 

C

Collector to emitter saturation

V

CE(sat)

–2

V

I

C

= –2 A, I = –0.2 A*2

voltage

 

 

 

 

 

 

 

 

 

 

 

B

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

f

T

 

20

MHz

V

CE

= –5 V, I = –0.5 A*2

 

 

 

 

 

 

 

 

 

 

C

Collector output capacitance

Cob

75

pF

V

CB = –20 V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

 

Notes: 1. The 2SB859 is grouped by hFE1 as follows.

 

 

 

 

 

 

2.

Pulse test

 

 

 

 

 

 

 

 

 

 

 

 

B

C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

60 to 120

100 to 200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Collector Dissipation

Curve

 

60

 

 

 

(W)

 

 

 

 

C

 

 

 

 

P

 

 

 

 

power dissipation

40

 

 

 

20

 

 

 

Collector

 

 

 

 

 

0

50

100

150

 

 

Case temperature TC (°C)

 

Area of Safe Operation

 

–5

 

 

(–10 V, –4 A)

 

 

 

 

 

 

 

IC max(Continuous)

 

 

 

 

 

 

 

DC

 

 

 

(A)

–2

 

 

Operation

 

 

TC = 25°C

 

(–33 V, –12 A)

C

 

I

–1.0

 

 

 

 

 

 

current

 

 

 

 

 

 

–0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector

–0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

–0.1

 

 

 

 

 

 

 

–0.05

 

 

(–80 V, –0.06 A)

 

 

 

 

 

 

 

 

 

–1

–2

–5

–10

–20

–50

–100

Collector to emitter voltage VCE (V)

2

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