HIT 2SB831 Datasheet

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HIT 2SB831 Datasheet

2SB831

Silicon PNP Epitaxial

Application

Low frequency amplifier

Complementary pair with 2SD1101

Outline

MPAK

3

 

1

Emitter

 

1.

2

2.

Base

3.

Collector

 

2SB831

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–25

V

Collector to emitter voltage

VCEO

–20

V

Emitter to base voltage

VEBO

–5

V

Collector current

IC

–0.7

A

 

 

 

 

Collector peak current

iC(peak)

–1

A

Collector power dissipation

PC

150

mW

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

 

V(BR)CBO

–25

V

I

C = –10 A, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–20

V

I

C = –1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

 

V(BR)EBO

–5

V

I

E = –10 A, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

 

ICBO

–1.0

A

VCB = –20 V, IE = 0

DC current transfer ratio

 

h *1

85

240

 

V

CE

= –1 V, I = –0.15 A*2

 

 

 

FE

 

 

 

 

 

C

Collector to emitter saturation

V

–0.5

V

I

C

= –0.5 A, I = –0.05 A*2

voltage

 

 

CE(sat)

 

 

 

 

 

 

B

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

 

V

–1.0

V

V

CE

= –1 V, I = –0.15 A*2

 

 

 

BE

 

 

 

 

 

C

Notes: 1. The 2SB831 is grouped by hFE as follows.

 

 

 

 

 

 

2.

Pulse test

 

 

 

 

 

 

 

 

 

 

Grade

B

C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mark

BB

BC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE

85 to 170

120 to 240

 

 

 

 

 

 

 

 

See characteristic curves of 2SB561.

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