2SB831
Silicon PNP Epitaxial
Application
•Low frequency amplifier
•Complementary pair with 2SD1101
Outline
MPAK
3
|
1 |
Emitter |
|
|
1. |
||
2 |
2. |
Base |
|
3. |
Collector |
||
|
2SB831
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–25 |
V |
Collector to emitter voltage |
VCEO |
–20 |
V |
Emitter to base voltage |
VEBO |
–5 |
V |
Collector current |
IC |
–0.7 |
A |
|
|
|
|
Collector peak current |
iC(peak) |
–1 |
A |
Collector power dissipation |
PC |
150 |
mW |
|
|
|
|
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Electrical Characteristics (Ta = 25°C)
Item |
|
|
Symbol |
Min |
Typ |
Max |
Unit |
Test conditions |
|||
Collector to base breakdown |
|
V(BR)CBO |
–25 |
— |
— |
V |
I |
C = –10 A, IE = 0 |
|||
voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
Collector to emitter breakdown |
V(BR)CEO |
–20 |
— |
— |
V |
I |
C = –1 mA, RBE = ∞ |
||||
voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
Emitter to base breakdown |
|
V(BR)EBO |
–5 |
— |
— |
V |
I |
E = –10 A, IC = 0 |
|||
voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
Collector cutoff current |
|
ICBO |
— |
— |
–1.0 |
A |
VCB = –20 V, IE = 0 |
||||
DC current transfer ratio |
|
h *1 |
85 |
— |
240 |
|
V |
CE |
= –1 V, I = –0.15 A*2 |
||
|
|
|
FE |
|
|
|
|
|
C |
||
Collector to emitter saturation |
V |
— |
— |
–0.5 |
V |
I |
C |
= –0.5 A, I = –0.05 A*2 |
|||
voltage |
|
|
CE(sat) |
|
|
|
|
|
|
B |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Base to emitter voltage |
|
V |
— |
— |
–1.0 |
V |
V |
CE |
= –1 V, I = –0.15 A*2 |
||
|
|
|
BE |
|
|
|
|
|
C |
||
Notes: 1. The 2SB831 is grouped by hFE as follows. |
|
|
|
|
|
|
|||||
2. |
Pulse test |
|
|
|
|
|
|
|
|
|
|
Grade |
B |
C |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Mark |
BB |
BC |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
hFE |
85 to 170 |
120 to 240 |
|
|
|
|
|
|
|
|
See characteristic curves of 2SB561.
2