HIT 2SB831 Datasheet

2SB831

Silicon PNP Epitaxial

Application

•Low frequency amplifier

•Complementary pair with 2SD1101

Outline

MPAK

3

		1	Emitter
		1.
	2	2.	Base
		3.	Collector

2SB831

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–25	V
Collector to emitter voltage	VCEO	–20	V
Emitter to base voltage	VEBO	–5	V
Collector current	IC	–0.7	A
Collector peak current	iC(peak)	–1	A
Collector power dissipation	PC	150	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item			Symbol	Min	Typ	Max	Unit	Test conditions
Collector to base breakdown			V(BR)CBO	–25	—	—	V	I	C = –10 A, IE = 0
voltage
Collector to emitter breakdown			V(BR)CEO	–20	—	—	V	I	C = –1 mA, RBE = ∞
voltage
Emitter to base breakdown			V(BR)EBO	–5	—	—	V	I	E = –10 A, IC = 0
voltage
Collector cutoff current			ICBO	—	—	–1.0	A	VCB = –20 V, IE = 0
DC current transfer ratio			h *1	85	—	240		V	CE		= –1 V, I = –0.15 A*2
			FE								C
Collector to emitter saturation			V	—	—	–0.5	V	I	C	= –0.5 A, I = –0.05 A*2
voltage			CE(sat)								B
Base to emitter voltage			V	—	—	–1.0	V	V	CE		= –1 V, I = –0.15 A*2
			BE								C
Notes: 1. The 2SB831 is grouped by hFE as follows.
2.	Pulse test
Grade	B	C
Mark	BB	BC
hFE	85 to 170	120 to 240

See characteristic curves of 2SB561.

2