HIT 2SB739, 2SB738 Datasheet

2SB738, 2SB739

Silicon PNP Epitaxial

Application

•Low frequency power amplifier

•Complementary pair with 2SD787 and 2SD788

Outline

TO-92MOD

1. Emitter

2. Collector

3. Base

3

2

1

2SB738, 2SB739

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	2SB738	2SB739	Unit
Collector to base voltage	VCBO	–20	–20	V
Collector to emitter voltage	VCEO	–16	–20	V
Emitter to base voltage	VEBO	–6	–6	V
Collector current	IC	–2	–2	A
Collector power dissipation	PC	0.9	0.9	W
Junction temperature	Tj	150	150	°C
Storage temperature	Tstg	–55 to +150	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

2SB738

2SB739

Item

Symbol Min

Typ

Max

Min Typ Max

Unit

Test conditions

Collector to base

V(BR)CBO

–20

—

—

–20

—

—

V

I

C = –10 A, IE = 0

breakdown voltage

Collector to emitter

V(BR)CEO

–16

—

—

–20

—

—

V

I

C = –1 mA, RBE = ∞

breakdown voltage

Emitter to base breakdown

V(BR)EBO

–6

—

—

–6

—

—

V

I

E = –10 A, IC = 0

voltage

Collector cutoff current

ICBO

—

—

–2

—

—

–2

A

VCB = –16 V, IE = 0

Emitter cutoff current

IEBO

—

—

–0.2

—

—

–0.2

A

VEB = –6 V, IC = 0

DC current transfer ratio

h

FE

*1

100

—

320

100

—

320

V

CE

= –2 V, I = –0.1 A

C

Collector to emitter

VCE(sat)

—

—

–0.3

—

—

–0.3

V

I

C = –1 A, IB = –0.1 A

saturation voltage

Gain bandwidth product

fT

—

150

—

—

150

—

MHz V

CE = –2 V, IC = –10 mA

Collector output capacitance Cob

—

50

—

—

50

—

pF

V

CB = –10 V, IE = 0,

f = 1 MHz

Note: 1. The 2SB738 and 2SB739 are grouped by hFE as follows.

B

C

100 to 200

160 to 320

2