HIT 2SB727(K) Datasheet

2SB727(K)

Silicon PNP Epitaxial

Application

Medium speed and power switching complementary pair with 2SD768(K)

Outline

TO-220AB

2

1. Base

1

2. Collector

(Flange)

1

1 kΩ

400 Ω

3. Emitter

2 3

(Typ)

(Typ)

3

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Rating

Unit

Collector to base voltage

VCBO

–120

V

Collector to emitter voltage

VCEO

–120

V

Emitter to base voltage

VEBO

–7

V

Collector current

IC

–6

A

Collector peak current

IC(peak)

–10

A

Collector power dissipation

PC*1

40

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note: 1. Value at TC = 25°C

2SB727(K)

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown

V(BR)CEO

–120

—

—

V

I

C = –25 mA, RBE = ∞

voltage

Emitter to base breakdown

V(BR)EBO

–7

—

—

V

I

E = –50 mA, IC = 0

voltage

Collector cutoff current

ICBO

—

—

–100

A

VCB = –120 V, IE = 0

ICEO

—

—

–10

A

VCE = –100 V, RBE = ∞

DC current transfer ratio

h

1000

—

20000

V

CE

= –3 V, I = –3 A*1

FE

C

Collector to emitter saturation

V

CE(sat)1

—

—

–1.5

V

I

C

= –3 A, I = –6 mA*1

B

voltage

V

CE(sat)2

—

—

–3.0

V

I

C

= –6 A, I = –60 mA*1

B

Base to emitter saturation

V

BE(sat)1

—

—

–2.0

V

I

C

= –3 A, I = –6 mA*1

B

voltage

V

BE(sat)2

—

—

–3.5

V

I

C

= –6 A, I = –60 mA*1

B

Turn on time

ton

—

1.0

—

s

IC = –3 A, IB1 = –IB2 = –6 mA

Turn off time

toff

—

3.0

—

s

Note: 1. Pulse test

Maximum Collector Dissipation Curve

	60
(W)
Pc
dissipation	40
Collector power	20
	0	50	100	150
		Case Temperature TC (°C)

Area of Safe Operation

	–30	IC (max) (Continuous)				1 μs
	–10	iC (peak)
(A)						100
							μ
C
	–3						s
I
Current
						1
					PW
						ms
	–1.0			DC		=
						10
				(T
				C
Collector				=		ms
				25
	–0.3			Operation
		Ta = 25°C			°
					C)
	–0.1
		1 Shot pulse
	–0.03
	–1		–3	–10	–30		–100	–300	–1,000
			Collector to emitter Voltage					VCE (V)

2