HIT 2SB716A, 2SB716, 2SB715 Datasheet

HIT 2SB716A, 2SB716, 2SB715 Datasheet

2SB715, 2SB716, 2SB716A

Silicon PNP Epitaxial

Application

Low frequency high voltage amplifier

Complementary pair with 2SD755, 2SD756 and 2SD756A

Outline

TO-92MOD

1. Emitter

2. Collector

3. Base

3

2

1

2SB715, 2SB716, 2SB716A

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SB715

2SB716

2SB716A

Unit

Collector to base voltage

VCBO

–100

–120

–140

V

Collector to emitter voltage

VCEO

–100

–120

–140

V

Emitter to base voltage

VEBO

–5

–5

–5

V

Collector current

IC

–50

–50

–50

mA

 

 

 

 

 

 

Collector power dissipation

PC

750

750

750

mW

 

 

 

 

 

 

Junction temperature

Tj

150

150

150

°C

Storage temperature

Tstg

–55 to +150

–55 to +150

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

 

 

2SB715

 

 

2SB716

 

2SB716A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Min Typ Max

Min

Typ

Max

Unit

Test conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to base

V(BR)CBO

–100

–120

–140

V

I

C = –10 A, IE = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

V(BR)CEO

–100

–120

–140

V

I

C = –1 mA,

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RBE =

Collector cutoff current

ICBO

–0.5

 

 

 

A

VCB = –80 V, IE = 0

 

 

–0.5

 

–0.5

 

A

VCB = –100 V, IE = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

DC current transfer ratio

hFE1*1

250

800

250

800

250

500

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE2

125

125

125

 

 

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –10 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

VBE

–0.75

 

–0.75

–0.75

V

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

VCE(sat)

–0.2

 

–0.2

–0.2

V

I

C = –10 mA,

saturation voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB = –1 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

150

 

150

150

MHz

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –5 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector output

Cob

1.8

 

1.8

1.8

pF

V

CB = –25 V, IE = 0,

capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

Note: 1. The 2SB715, 2SB716 and 2SB716A are grouped by hFE1 as follows.

 

D

E

 

 

 

 

 

 

 

 

 

 

 

 

 

2SB715, 2SB716

250 to 500

400 to 800

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2SB716A

250 to 500

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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