HIT 2SB716A, 2SB716, 2SB715 Datasheet

2SB715, 2SB716, 2SB716A

Silicon PNP Epitaxial

Application

•Low frequency high voltage amplifier

•Complementary pair with 2SD755, 2SD756 and 2SD756A

Outline

TO-92MOD

1. Emitter

2. Collector

3. Base

3

2

1

2SB715, 2SB716, 2SB716A

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	2SB715	2SB716	2SB716A	Unit
Collector to base voltage	VCBO	–100	–120	–140	V
Collector to emitter voltage	VCEO	–100	–120	–140	V
Emitter to base voltage	VEBO	–5	–5	–5	V
Collector current	IC	–50	–50	–50	mA
Collector power dissipation	PC	750	750	750	mW
Junction temperature	Tj	150	150	150	°C
Storage temperature	Tstg	–55 to +150	–55 to +150	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

		2SB715				2SB716				2SB716A
Item	Symbol	Min	Typ	Max		Min Typ Max				Min		Typ	Max	Unit	Test conditions
Collector to base	V(BR)CBO	–100	—	—	–120		—	—	–140		—	—	V	I	C = –10 A, IE = 0
breakdown voltage
Collector to emitter	V(BR)CEO	–100	—	—	–120		—	—	–140		—	—	V	I	C = –1 mA,
breakdown voltage															RBE = ∞
Collector cutoff current	ICBO	—	—	–0.5	—		—	—	—	—		—		A	VCB = –80 V, IE = 0
		—	—	—	—	—		–0.5	—	—		–0.5		A	VCB = –100 V, IE = 0
DC current transfer ratio	hFE1*1	250	—	800	250		—	800	250		—	500		V	CE = –12 V,
															IC = –2 mA
	hFE2	125	—	—	125		—	—	125		—	—		V	CE = –12 V,
															IC = –10 mA
Base to emitter voltage	VBE	—	—	–0.75	—		—	–0.75	—	—		–0.75	V	V	CE = –12 V,
															IC = –2 mA
Collector to emitter	VCE(sat)	—	—	–0.2	—		—	–0.2	—	—		–0.2	V	I	C = –10 mA,
saturation voltage															IB = –1 mA
Gain bandwidth product	fT	—	150	—	—		150	—	—	150		—	MHz	V	CE = –12 V,
															IC = –5 mA
Collector output	Cob	—	1.8	—	—		1.8	—	—	1.8		—	pF	V	CB = –25 V, IE = 0,
capacitance															f = 1 MHz

Note: 1. The 2SB715, 2SB716 and 2SB716A are grouped by hFE1 as follows.

D

E

2SB715, 2SB716

250 to 500

400 to 800

2SB716A

250 to 500

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