HIT 2SB716A, 2SB716, 2SB715 Datasheet

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HIT 2SB716A, 2SB716, 2SB715 Datasheet

2SB715, 2SB716, 2SB716A

Silicon PNP Epitaxial

Application

Low frequency high voltage amplifier

Complementary pair with 2SD755, 2SD756 and 2SD756A

Outline

TO-92MOD

1. Emitter

2. Collector

3. Base

3

2

1

2SB715, 2SB716, 2SB716A

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SB715

2SB716

2SB716A

Unit

Collector to base voltage

VCBO

–100

–120

–140

V

Collector to emitter voltage

VCEO

–100

–120

–140

V

Emitter to base voltage

VEBO

–5

–5

–5

V

Collector current

IC

–50

–50

–50

mA

 

 

 

 

 

 

Collector power dissipation

PC

750

750

750

mW

 

 

 

 

 

 

Junction temperature

Tj

150

150

150

°C

Storage temperature

Tstg

–55 to +150

–55 to +150

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

 

 

2SB715

 

 

2SB716

 

2SB716A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Min Typ Max

Min

Typ

Max

Unit

Test conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to base

V(BR)CBO

–100

–120

–140

V

I

C = –10 A, IE = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

V(BR)CEO

–100

–120

–140

V

I

C = –1 mA,

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RBE =

Collector cutoff current

ICBO

–0.5

 

 

 

A

VCB = –80 V, IE = 0

 

 

–0.5

 

–0.5

 

A

VCB = –100 V, IE = 0

 

 

 

 

 

 

 

 

 

 

 

 

 

DC current transfer ratio

hFE1*1

250

800

250

800

250

500

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE2

125

125

125

 

 

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –10 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

VBE

–0.75

 

–0.75

–0.75

V

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

VCE(sat)

–0.2

 

–0.2

–0.2

V

I

C = –10 mA,

saturation voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB = –1 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

150

 

150

150

MHz

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –5 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector output

Cob

1.8

 

1.8

1.8

pF

V

CB = –25 V, IE = 0,

capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

Note: 1. The 2SB715, 2SB716 and 2SB716A are grouped by hFE1 as follows.

 

D

E

 

 

 

 

 

 

 

 

 

 

 

 

 

2SB715, 2SB716

250 to 500

400 to 800

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2SB716A

250 to 500

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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