HIT 2SB649A, 2SB649 Datasheet

2SB649, 2SB649A

Silicon PNP Epitaxial

Application

Low frequency power amplifier complementary pair with 2SD669/A

Outline

1. Emitter

2. Collector

3. Base

TO-126 MOD

1

2

3

2SB649, 2SB649A

2

Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item Symbol 2SB649 2SB649A Unit

Collector to base voltage V

CBO

–180 –180 V

Collector to emitter voltage V

CEO

–120 –160 V

Emitter to base voltage V

EBO

–5 –5 V

Collector current I

C

–1.5 –1.5 A

Collector peak current I

C(peak)

–3 –3 A

Collector power dissipation P

C

11W

P

C

*

1

20 20 W

Junction temperature Tj 150 150 °C

Storage temperature Tstg –55 to +150 –55 to +150 °C

Note: 1. Value at T

C

= 25°C

2SB649, 2SB649A

3

Electrical Characteristics (Ta = 25°C)

2SB649 2SB649A

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V

(BR)CBO

–180 — — –180 — — V I

C

= –1 mA, I

E

= 0

Collector to emitter

breakdown voltage

V

(BR)CEO

–120 — — –160 — — V I

C

= –10 mA, R

BE

= ∞

Emitter to base

breakdown voltage

V

(BR)EBO

–5 — — –5 — — V I

E

= –1 mA, I

C

= 0

Collector cutoff current I

CBO

— — –10 — — –10 µAV

CB

= –160 V, I

E

= 0

DC current transfer ratio h

FE1

*

1

60 — 320 60 — 200 V

CE

= –5 V,

I

C

= –150 mA

h

FE2

30 — — 30 — — V

CE

= –5 V,

I

C

= –500 mA*

2

Collector to emitter

saturation voltage

V

CE(sat)

——–1——–1V I

C

= –500 mA,

I

B

= –50 mA

Base to emitter voltage V

BE

— — –1.5 — — –1.5 V V

CE

= –5 V,

I

C

= –150 mA

Gain bandwidth product f

T

— 140 — — 140 — MHz V

CE

= –5 V,

I

C

= –150 mA

Collector output

capacitance

Cob — 27 — — 27 — pF V

CB

= –10 V, I

E

= 0,

f = 1 MHz

Notes: 1. The 2SB649 and 2SB649A are grouped by h

FE1

as follows.

2. Pulse test

BCD

2SB649 60 to 120 100 to 200 160 to 320

2SB649A 60 to 120 100 to 200 —