2SB647, 2SB647A
Silicon PNP Epitaxial
Application
•Low frequency power amplifier
•Complementary pair with 2SD667/A
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SB647, 2SB647A
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
2SB647 |
2SB647A |
Unit |
Collector to base voltage |
VCBO |
–120 |
–120 |
V |
Collector to emitter voltage |
VCEO |
–80 |
–100 |
V |
Emitter to base voltage |
VEBO |
–5 |
–5 |
V |
Collector current |
IC |
–1 |
–1 |
A |
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Collector peak current |
iC(peak) |
–2 |
–2 |
A |
Collector power dissipation |
PC |
0.9 |
0.9 |
W |
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Junction temperature |
Tj |
150 |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
–55 to +150 |
°C |
Electrical Characteristics (Ta = 25°C)
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2SB647 |
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2SB647A |
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Symbol Min |
Typ |
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Max |
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Min Typ Max |
Unit |
Test conditions |
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Collector to base |
V(BR)CBO |
–120 — |
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— |
–120 — |
— |
V |
I |
C = –10 A, IE = 0 |
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breakdown voltage |
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Collector to emitter |
V(BR)CEO |
–80 |
— |
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–100 |
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— |
V |
I |
C = –1 mA, RBE = ∞ |
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breakdown voltage |
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Emitter to base breakdown |
V(BR)EBO |
–5 |
— |
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–5 |
— |
— |
V |
I |
E = –10 A, IC = 0 |
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voltage |
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Collector cutoff current |
ICBO |
— |
— |
–10 |
— |
— |
–10 |
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A |
VCB = –100 V, IE = 0 |
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DC current transfer ratio |
hFE1*1 |
60 |
— |
320 |
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60 |
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— |
200 |
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V CE = –5 V, |
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IC = –150 mA*2 |
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hFE2 |
30 |
— |
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30 |
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— |
— |
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V |
CE = –5 V, |
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IC = –500 mA*2 |
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Collector to emitter |
VCE(sat) |
— |
— |
–1 |
— |
— |
–1 |
V |
I |
C = –500 mA, |
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saturation voltage |
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IB = –50 mA*2 |
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Base to emitter voltage |
VBE |
— |
— |
–1.5 |
— |
— |
–1.5 |
V |
V |
CE = –5 V, |
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IC = –150 mA*2 |
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Gain bandwidth product |
fT |
— |
140 |
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140 |
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MHz V |
CE = –5 V, IC = –150 mA |
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Collector output capacitance Cob |
— |
20 |
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20 |
— |
pF |
V |
CB = –10 V, IE = 0 |
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f = 1 MHz |
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Notes: 1. The 2SB647 and 2SB647A are grouped by hFE1 as follows. |
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2. |
Pulse test |
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B |
C |
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2SB647 |
60 to 120 |
100 to 200 |
160 to 320 |
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2SB647A |
60 to 120 |
100 to 200 |
— |
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