HIT 2SB566A(K), 2SB566(K) Datasheet

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HIT 2SB566A(K), 2SB566(K) Datasheet

2SB566(K), 2SB566A(K)

Silicon PNP Triple Diffused

Application

Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)

Outline

TO-220AB

 

1.

Base

 

2.

Collector

1

 

(Flange)

3.

Emitter

2

3

 

Absolute Maximum Ratings (Ta = 25°C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Ratings

 

 

Item

Symbol

2SB566(K)

2SB566A(K)

Unit

 

 

 

 

 

Collector to base voltage

VCBO

–70

–70

V

Collector to emitter voltage

VCEO

–50

–60

V

Emitter to base voltage

VEBO

–5

–5

V

Collector current

IC

–4

–4

A

 

 

 

 

 

Collector peak current

IC(peak)

–8

–8

A

Collector power dissipation

P *1

40

40

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

 

 

 

Junction temperature

Tj

150

150

°C

Storage temperature

Tstg

–55 to +150

–55 to +150

°C

Note: 1. Value at TC = 25°C.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2SB566(K), 2SB566A(K)

Electrical Characteristics (Ta = 25°C)

 

 

2SB566(K)

 

2SB566A(K)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Min

Typ Max

Unit

 

 

 

Test conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to base

V(BR)CBO

–70

–70

V

I

 

 

 

C = –10 A, IE = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

V(BR)CEO

–50

–60

V

I

 

 

 

C = –50 mA, RBE =

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base

V(BR)EBO

–5

–5

V

I

 

 

 

E = –10 A, IC = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–1

–1

 

A

 

 

 

VCB = –50 V, IE = 0

DC current tarnsfer ratio h *1

60

200

60

200

 

 

V

CE

= –4 V, I = –1 A

 

FE1

 

 

 

 

 

 

 

 

 

 

 

C

 

hFE2

35

35

 

V

 

 

 

CE = –4 V, IC = –0.1 A

Collector to emitter

VCE(sat)

–1.0

–1.0

V

I

 

 

 

C = –2 A, IB = –0.2 A

saturation voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter

VBE(sat)

–1.2

–1.2

V

I

 

 

 

C = –2 A, IB = –0.2 A

saturation voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

15

15

MHz V

 

 

 

CE = –4 V, IC = –0.5 A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn on time

ton

0.3

0.3

 

s

 

 

 

VCC = –10.5 V

Turn off time

toff

3.0

3.0

 

s

 

 

 

IC = 10IB1 = –10IB2 =

Storage time

tstg

2.5

2.5

 

s

 

 

 

–0.5 A

Note: 1. The 2SB566(K) and 2SB566A(K) are grouped by hFE1 as follows.

B

C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

60 to 120

100 to 200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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