HIT 2SB566A(K), 2SB566(K) Datasheet

2SB566(K), 2SB566A(K)

Silicon PNP Triple Diffused

Application

Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)

Outline

1. Base

2. Collector

(Flange)

3. Emitter

TO-220AB

1

2

3

Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item Symbol 2SB566(K) 2SB566A(K) Unit

Collector to base voltage V

CBO

–70 –70 V

Collector to emitter voltage V

CEO

–50 –60 V

Emitter to base voltage V

EBO

–5 –5 V

Collector current I

C

–4 –4 A

Collector peak current I

C(peak)

–8 –8 A

Collector power dissipation P

C

*

1

40 40 W

Junction temperature Tj 150 150 °C

Storage temperature Tstg –55 to +150 –55 to +150 °C

Note: 1. Value at T

C

= 25°C.

2SB566(K), 2SB566A(K)

2

Electrical Characteristics (Ta = 25°C)

2SB566(K) 2SB566A(K)

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V

(BR)CBO

–70 — — –70 — — V I

C

= –10 µA, I

E

= 0

Collector to emitter

breakdown voltage

V

(BR)CEO

–50 — — –60 — — V I

C

= –50 mA, R

BE

= ∞

Emitter to base

breakdown voltage

V

(BR)EBO

–5 — — –5 — — V I

E

= –10 µA, I

C

= 0

Collector cutoff current I

CBO

——–1——–1µAV

CB

= –50 V, I

E

= 0

DC current tarnsfer ratio h

FE1

*

1

60 — 200 60 — 200 V

CE

= –4 V, I

C

= –1 A

h

FE2

35 — — 35 — — V

CE

= –4 V, I

C

= –0.1 A

Collector to emitter

saturation voltage

V

CE(sat)

— — –1.0 — — –1.0 V I

C

= –2 A, I

B

= –0.2 A

Base to emitter

saturation voltage

V

BE(sat)

— — –1.2 — — –1.2 V I

C

= –2 A, I

B

= –0.2 A

Gain bandwidth product f

T

— 15 — — 15 — MHz V

CE

= –4 V, I

C

= –0.5 A

Turn on time t

on

— 0.3 — — 0.3 — µsV

CC

= –10.5 V

Turn off time t

off

— 3.0 — — 3.0 — µsI

C

= 10I

B1

= –10I

B2

=

Storage time t

stg

— 2.5 — — 2.5 — µs –0.5 A

Note: 1. The 2SB566(K) and 2SB566A(K) are grouped by h

FE1

as follows.

BC

60 to 120 100 to 200