HIT 2SB566A(K), 2SB566(K) Datasheet

0 (0)
2SB566(K), 2SB566A(K)
Silicon PNP Triple Diffused
Application
Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)
Outline
1. Base
2. Collector
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SB566(K) 2SB566A(K) Unit
Collector to base voltage V
CBO
–70 –70 V
Collector to emitter voltage V
CEO
–50 –60 V
Emitter to base voltage V
EBO
–5 –5 V
Collector current I
C
–4 –4 A
Collector peak current I
C(peak)
–8 –8 A
Collector power dissipation P
C
*
1
40 40 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at T
C
= 25°C.
2SB566(K), 2SB566A(K)
2
Electrical Characteristics (Ta = 25°C)
2SB566(K) 2SB566A(K)
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–70 –70 V I
C
= –10 µA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–50 –60 V I
C
= –50 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
–5 –5 V I
E
= –10 µA, I
C
= 0
Collector cutoff current I
CBO
——–1—1µAV
CB
= –50 V, I
E
= 0
DC current tarnsfer ratio h
FE1
*
1
60 200 60 200 V
CE
= –4 V, I
C
= –1 A
h
FE2
35 35 V
CE
= –4 V, I
C
= –0.1 A
Collector to emitter
saturation voltage
V
CE(sat)
–1.0 –1.0 V I
C
= –2 A, I
B
= –0.2 A
Base to emitter
saturation voltage
V
BE(sat)
–1.2 –1.2 V I
C
= –2 A, I
B
= –0.2 A
Gain bandwidth product f
T
15 15 MHz V
CE
= –4 V, I
C
= –0.5 A
Turn on time t
on
0.3 0.3 µsV
CC
= –10.5 V
Turn off time t
off
3.0 3.0 µsI
C
= 10I
B1
= –10I
B2
=
Storage time t
stg
2.5 2.5 µs –0.5 A
Note: 1. The 2SB566(K) and 2SB566A(K) are grouped by h
FE1
as follows.
BC
60 to 120 100 to 200
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