2SB562
Silicon PNP Epitaxial
Application
•Low frequency power amplifier
•Complementary pair with 2SD468
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SB562
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–25 |
V |
Collector to emitter voltage |
VCEO |
–20 |
V |
Emitter to base voltage |
VEBO |
–5 |
V |
Collector current |
IC |
–1.0 |
A |
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Collector peak current |
iC(peak) |
–1.5 |
A |
Collector power dissipation |
PC |
0.9 |
W |
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Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
Test conditions |
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Collector to base breakdown |
V(BR)CBO |
–25 |
— |
— |
V |
I |
C = –10 A, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
–20 |
— |
— |
V |
I |
C = –1 mA, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
V(BR)EBO |
–5 |
— |
— |
V |
I |
E = –10 A, IC = 0 |
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voltage |
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Collector cutoff current |
ICBO |
— |
— |
–1.0 |
A |
VCB = –20 V, IE = 0 |
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DC current transfer ratio |
h *1 |
85 |
— |
240 |
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V |
CE |
= –2 V, |
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FE |
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IC = –0.5 A (Pulse test) |
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Collector to emitter saturation |
VCE(sat) |
— |
–0.2 |
–0.5 |
V |
I C = –0.8 A, |
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voltage |
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IB = –0.08 A (Pulse test) |
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Base to emitter voltage |
VBE |
— |
–0.8 |
–1.0 |
V |
V CE = –2 V, |
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IC = –0.5 A (Pulse test) |
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Gain bandwidth product |
fT |
— |
350 |
— |
MHz |
V |
CE = –2 V, |
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IC = –0.5 A (Pulse test) |
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Collector output capacitance |
Cob |
— |
38 |
— |
pF |
V |
CB = –10 V, IE = 0 |
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f = 1 MHz |
Note: 1. The 2SB562 is grouped by hFE as follows.
B |
C |
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85 to 170 |
120 to 240 |
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