HIT 2SB561 Datasheet

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HIT 2SB561 Datasheet

2SB561

Silicon PNP Epitaxial

Application

Low frequency power amplifier

Complementary pair with 2SD467

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SB561

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–25

V

Collector to emitter voltage

VCEO

–20

V

Emitter to base voltage

VEBO

–5

V

Collector current

IC

–0.7

A

 

 

 

 

Collector peak current

iC(peak)

–1.0

A

Collector power dissipation

PC

0.5

W

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

–25

V

I

C = –10 A, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–20

V

I

C = –1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–5

V

I

E = –10 A, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–1.0

A

VCB = –20 V, IE = 0

DC current transfer ratio

h *1

85

240

 

V

CE

= –1 V,

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

IC = –0.15 A (Pulse test)

 

 

 

 

 

 

 

Collector to emitter saturation

VCE(sat)

–0.2

–0.5

V

I C = –0.5 A, IB = –0.05 A

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

VBE

–0.75

–1.0

V

V CE = –1 V, IC = –0.15 A

Gain bandwidth product

fT

350

MHz

V

CE = –1 V, IC = –0.15 A

 

 

 

 

 

 

 

 

Collector output capacitance

Cob

20

pF

V

CB = –10 V, IE = 0

 

 

 

 

 

 

f = 1 MHz

Note: 1. The 2SB561 is grouped by hFE as follows.

B

C

 

 

 

 

 

 

 

 

 

 

 

 

85 to 170

120 to 240

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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