2SB1494
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary Pair with 2SD2256
Outline
TO-3P
2
1.Base
2.Collector (Flange)
3.Emitter
1
ID
1 |
2 |
3 |
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2SB1494
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–120 |
V |
Collector to emitter voltage |
VCEO |
–120 |
V |
Emitter to base voltage |
VEBO |
–7 |
V |
Collector current |
IC |
–25 |
A |
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Collector peak current |
IC(peak) |
–35 |
A |
Collector power dissipation |
PC*1 |
120 |
W |
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Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
C to E diode forward current |
ID*1 |
25 |
A |
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Note: 1. Value at TC = 25°C. |
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Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
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Unit |
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Test conditions |
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Collector to base breakdown |
V(BR)CBO |
–120 |
— |
— |
V |
I |
C = –0.1 mA, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
–120 |
— |
— |
V |
I |
C = –25 mA, RBE = ∞ |
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voltage |
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Collector to emitter sustain |
VCEO(sus) |
–120 |
— |
— |
V |
I |
C = –200 mA, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
V(BR)EBO |
–7 |
— |
— |
V |
I |
E = –50 mA, IC = 0 |
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voltage |
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Collector cutoff current |
ICBO |
— |
— |
–10 |
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A |
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VCB = –100 V, IE = 0 |
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ICEO |
— |
— |
–10 |
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V |
CE = –100 V, RBE = ∞ |
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DC current transfer ratio |
h |
FE1 |
2000 |
— |
20000 |
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V |
CE |
= –4 V, I |
= –12 A*1 |
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C |
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h |
FE2 |
500 |
— |
— |
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V |
CE |
= –4 V, I |
= –25 A*1 |
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C |
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Collector to emitter saturation |
V |
CE(sat)1 |
— |
— |
–2.0 |
V |
I |
C |
= –12 A, I |
= –24 mA*1 |
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B |
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voltage |
V |
CE(sat)2 |
— |
— |
–3.5 |
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I |
C |
= –25 A, I |
= –250 mA*1 |
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B |
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Base to emitter saturation |
VBE(sat)1 |
— |
— |
–3.0 |
V |
I |
C = –12 A, IB = –24 mA |
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voltage |
V |
BE(sat)2 |
— |
— |
–4.5 |
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I |
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C |
= –25 A, I |
= –250 mA*1 |
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B |
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Note: 1. Pulse test.
2