HIT 2SB1494 Datasheet

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HIT 2SB1494 Datasheet

2SB1494

Silicon PNP Triple Diffused

Application

Low frequency power amplifier complementary Pair with 2SD2256

Outline

TO-3P

2

1.Base

2.Collector (Flange)

3.Emitter

1

ID

1

2

3

 

3

 

 

2SB1494

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–120

V

Collector to emitter voltage

VCEO

–120

V

Emitter to base voltage

VEBO

–7

V

Collector current

IC

–25

A

 

 

 

 

Collector peak current

IC(peak)

–35

A

Collector power dissipation

PC*1

120

W

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

C to E diode forward current

ID*1

25

A

 

 

 

 

Note: 1. Value at TC = 25°C.

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

 

Unit

 

Test conditions

 

Collector to base breakdown

V(BR)CBO

–120

V

I

C = –0.1 mA, IE = 0

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–120

V

I

C = –25 mA, RBE =

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter sustain

VCEO(sus)

–120

V

I

C = –200 mA, RBE =

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–7

V

I

E = –50 mA, IC = 0

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–10

 

A

 

VCB = –100 V, IE = 0

 

 

ICEO

–10

 

 

V

CE = –100 V, RBE =

 

DC current transfer ratio

h

FE1

2000

20000

 

 

V

CE

= –4 V, I

= –12 A*1

 

 

 

 

 

 

 

 

 

 

C

 

 

 

h

FE2

500

 

 

V

CE

= –4 V, I

= –25 A*1

 

 

 

 

 

 

 

 

 

 

C

 

 

Collector to emitter saturation

V

CE(sat)1

–2.0

V

I

C

= –12 A, I

= –24 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

B

 

 

voltage

V

CE(sat)2

–3.5

 

 

I

C

= –25 A, I

= –250 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

B

 

 

Base to emitter saturation

VBE(sat)1

–3.0

V

I

C = –12 A, IB = –24 mA

 

voltage

V

BE(sat)2

–4.5

 

 

I

 

C

= –25 A, I

= –250 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

B

 

 

Note: 1. Pulse test.

2

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