HIT 2SB1407(S) Datasheet

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2SB1407(L)/(S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2121(L)/(S)
Outline
4
1
2
3
4
3
2
1
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
2SB1407(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
–35 V
Collector to emitter voltage V
CEO
–35 V
Emitter to base voltage V
EBO
–5 V
Collector current I
C
–2.5 A
Collector peak current I
C(peak)
–3 A
Collector power dissipation P
C
*
1
18 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at T
C
= 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–35 V I
C
= –1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–35 V I
C
= –10 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
–5 V I
E
= –1 mA, I
C
= 0
Collector cutoff current I
CBO
–20 µAV
CB
= –35 V, I
E
= 0
DC current transfer ratio h
FE1
*
1
60 320 V
CE
= –2 V, I
C
= –0.5 A*
2
h
FE2
20 V
CE
= –2 V, I
C
= –1.5 A*
2
Base to emitter voltage V
BE
–1.5 V V
CE
= –2 V, I
C
= –1.5 A*
2
Collector to emitter saturation
voltage
V
CE(sat)
–1.0 V I
C
= –2 A, I
B
= –0.2 A*
2
Notes: 1. The 2SB1407(L)/(S) is grouped by h
FE1
as follows.
BCD
60 to 120 100 to 200 160 to 320
2. Pulse test.
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