HIT 2SB1400 Datasheet

0 (0)
2SB1400
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Outline
TO-220FM
1 k
(Typ)
(Typ)
1
2
3
1. Base
2. Collector
3. Emitter
1
2
3
2SB1400
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
–120 V
Collector to emitter voltage V
CEO
–120 V
Emitter to base voltage V
EBO
–7 V
Collector current I
C
–6 A
Collector peak current I
C(peak)
–10 A
Collector power dissipation P
C
2W
P
C
*
1
25
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at T
C
= 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–120 V I
C
= –0.1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–120 V I
C
= –25 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
–7 V I
E
= –50 mA, I
C
= 0
Collector cutoff current I
CBO
–10 µAV
CB
= –100 V, I
E
= 0
I
CEO
–10 V
CE
= –100 V, R
BE
=
DC current transfer ratio h
FE
1000 20000 V
CE
= –3 V, I
C
= –3 A*
1
Collector to emitter saturation V
CE(sat)1
–1.5 V I
C
= –3 A, I
B
= –6 mA*
1
voltage V
CE(sat)2
–3.0 I
C
= –6 A, I
B
= –60 mA*
1
Base to emitter saturation V
BE(sat)1
–2.0 V I
C
= –3 A, I
B
= –6 mA*
1
voltage V
BE(sat)2
–3.5 I
C
= –6 A, I
B
= –60 mA*
1
Note: 1. Pulse test.
See switching characteristic curve of 2SB727(K).
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