HIT 2SB1400 Datasheet

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HIT 2SB1400 Datasheet

2SB1400

Silicon PNP Epitaxial

Application

Low frequency power amplifier

Outline

TO-220FM

2

 

 

1

 

 

1.

Base

 

 

2.

Collector

 

 

3.

Emitter

400 Ω

1

2 3

1 kΩ

 

 

(Typ)

(Typ)

3

2SB1400

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–120

V

Collector to emitter voltage

VCEO

–120

V

Emitter to base voltage

VEBO

–7

V

Collector current

IC

–6

A

 

 

 

 

Collector peak current

IC(peak)

–10

A

Collector power dissipation

PC

2

W

 

 

 

 

 

PC*1

25

 

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note: 1. Value at TC = 25°C.

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

 

Unit

 

Test conditions

 

Collector to base breakdown

V(BR)CBO

–120

V

I

C = –0.1 mA, IE = 0

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–120

V

I

C = –25 mA, RBE =

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–7

V

I

E = –50 mA, IC = 0

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–10

 

A

 

VCB = –100 V, IE = 0

 

 

ICEO

–10

 

 

V

CE = –100 V, RBE =

 

DC current transfer ratio

h

 

1000

20000

 

 

V

CE

= –3 V, I = –3 A*1

 

 

FE

 

 

 

 

 

 

 

C

 

Collector to emitter saturation

V

CE(sat)1

–1.5

V

I

C

= –3 A, I = –6 mA*1

 

 

 

 

 

 

 

 

 

 

 

B

 

voltage

V

CE(sat)2

–3.0

 

 

I

C

= –6 A, I = –60 mA*1

 

 

 

 

 

 

 

 

 

 

 

B

 

Base to emitter saturation

V

BE(sat)1

–2.0

V

I

C

= –3 A, I = –6 mA*1

 

 

 

 

 

 

 

 

 

 

 

B

 

voltage

V

BE(sat)2

–3.5

 

 

I

C

= –6 A, I = –60 mA*1

 

 

 

 

 

 

 

 

 

 

 

B

 

Note: 1. Pulse test.

See switching characteristic curve of 2SB727(K).

2

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