2SB1389
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
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2 |
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1 |
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1. |
Base |
ID |
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2. |
Collector |
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3. |
Emitter |
500 Ω |
1 |
2 3 |
4.5 kΩ |
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(Typ) |
(Typ) |
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3 |
2SB1389
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–60 |
V |
Collector to emitter voltage |
VCEO |
–60 |
V |
Emitter to base voltage |
VEBO |
–7 |
V |
Collector current |
IC |
–4 |
A |
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Collector peak current |
IC(peak) |
–8 |
A |
Collector power dissipation |
PC |
2 |
W |
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PC*1 |
25 |
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Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
C to E diode forward current |
ID*1 |
4 |
A |
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Note: 1. Value at TC = 25°C. |
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Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
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Unit |
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Test conditions |
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Collector to base breakdown |
V(BR)CBO |
–60 |
— |
— |
V |
I |
C = –0.1 mA, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
–60 |
— |
— |
V |
I |
C = –25 mA, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
V(BR)EBO |
–7 |
— |
— |
V |
I |
E = –50 mA, IC = 0 |
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voltage |
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Collector cutoff current |
ICBO |
— |
— |
–10 |
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A |
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VCB = –50 V, IE = 0 |
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ICEO |
— |
— |
–10 |
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V |
CE = –50 V, RBE = ∞ |
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DC current transfer ratio |
h |
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1000 |
— |
20000 |
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V |
CE |
= –3 V, I = –2 A*1 |
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FE |
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C |
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Collector to emitter saturation |
V |
CE(sat)1 |
— |
— |
–1.5 |
V |
I |
C |
= –2 A, I = –4 mA*1 |
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B |
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voltage |
V |
CE(sat)2 |
— |
— |
–3.0 |
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I |
C |
= –4 A, I = –40 mA*1 |
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B |
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Base to emitter saturation |
V |
BE(sat)1 |
— |
— |
–2.0 |
V |
I |
C |
= –2 A, I = –4 mA*1 |
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B |
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voltage |
V |
BE(sat)2 |
— |
— |
–3.5 |
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I |
C |
= –4 A, I = –40 mA*1 |
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B |
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C to E diode forward voltage |
V |
D |
— |
— |
3.0 |
V |
I |
D |
= 4 A*1 |
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Note: 1. Pulse test.
See switching characteristic curve of 2SB1101.
2