HIT 2SB1079 Datasheet

2SB1079

Silicon PNP Triple Diffused

Application

Low frequency power amplifier complementary pair with 2SD1559

Outline

TO-3P

			2
		1
1.	Base
2.	Collector
	(Flange)	1 kΩ	400 Ω
3.	Emitter
1		(Typ)	(Typ)
			3
2
3

2SB1079

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–100	V
Collector to emitter voltage	VCEO	–100	V
Emitter to base voltage	VEBO	–7	V
Collector current	IC	–20	A
Collector peak current	IC(peak)	–30	A
Base current	IB	–3	A
Collector power dissipation	PC*1	100	W
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C
Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

–100

—

—

V

I

C = –0.1 mA, IE = 0

voltage

Collector to emitter breakdown

V(BRCEO

–100

—

—

V

I

C = –25 mA, RBE = ∞

voltage

Collector to emitter sustain

VCEO(sus)

–100

—

—

V

I

C = –200 mA, RBE = ∞*1

voltage

Emitter to base breakdown

V(BR)EBO

–7

—

—

V

I

E = –50 mA, IC = 0

voltage

Collector cutoff current

ICBO

—

—

–100

A

VCB = –100 V, IE = 0

ICEO

—

—

–1.0

mA

V

CE = –80 V, RBE = ∞

DC current transfer ratio

h

1000

—

20000

V

CE

= –3 V, I

= –10 A*1

FE

C

Collector to emitter saturation

V

CE(sat)1

—

—

–2.0

V

I

C

= –10 A, I

= –20 mA*1

voltage

B

Base to emitter saturation

VBE(sat)1

—

—

–2.5

V

voltage

Collector to emitter saturation

V

CE(sat)2

—

—

–3.0

V

I

C

= –20 A, I

= –200 mA*1

voltage

B

Base to emitter saturation

VBE(sat)2

—

—

–3.5

V

voltage

Turn on time

ton

—

0.6

—

s

IC = –10 A, IB1 = –IB2 = –20 mA

Storage time

tstg

—

3.5

—

s

Note: 1. Pulse Test.

2