HIT 2SB1079 Datasheet
2SB1079
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1559
Outline
TO-3P
2
1
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
1 kΩ
(Typ)
400 Ω
(Typ)
3
2SB1079
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Base current I
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
B
1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time t
Storage time t
Note: 1. Pulse Test.
V
(BR)CBO
V
(BRCEO
V
CEO(sus)
V
(BR)EBO
CBO
I
CEO
FE
V
CE(sat)1
V
BE(sat)1
V
CE(sat)2
V
BE(sat)2
on
stg
–100 — — V IC = –0.1 mA, IE = 0
–100 — — V IC = –25 mA, RBE = ∞
–100 — — V IC = –200 mA, RBE = ∞*
–7 — — V IE = –50 mA, IC = 0
— — –100 µAVCB = –100 V, IE = 0
— — –1.0 mA VCE = –80 V, RBE = ∞
1000 — 20000 VCE = –3 V, IC = –10 A*
— — –2.0 V IC = –10 A, IB = –20 mA*
— — –2.5 V
— — –3.0 V IC = –20 A, IB = –200 mA*
— — –3.5 V
— 0.6 — µsI
— 3.5 — µs
–100 V
–100 V
–7 V
–20 A
–30 A
–3 A
100 W
= –10 A, IB1 = –IB2 = –20 mA
C
1
1
1
1
2
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