2SB1072(L), 2SB1072(S)
Silicon PNP Triple Diffused
Application
Medium speed power amplifier
Outline
DPAK
4
2, 4
4
1 |
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2 3 |
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1. |
Base |
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2. |
Collector |
S Type |
12 3 |
3. |
Emitter |
4. Collector |
L Type
1
3 kΩ (Typ)
ID |
0.4 kΩ |
(Typ) |
3 |
2SB1072(L), 2SB1072(S)
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Rating |
Unit |
Collector to base voltage |
VCBO |
–100 |
V |
Collector to emitter voltage |
VCEO |
–80 |
V |
Emitter to base voltage |
VEBO |
–7 |
V |
Collector current |
IC |
–4 |
A |
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C to E diode forward current |
ID*1 |
4 |
A |
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Collector peak current |
IC(peak) |
–8 |
A |
Collector power dissipation |
PC*1 |
20 |
W |
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Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Note: 1. Value at TC = 25°C |
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Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
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Typ |
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Max |
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Test conditions |
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Collector to emitter breakdown |
V(BR)CEO |
–80 |
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— |
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— |
V |
I |
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C = –25 mA, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
V(BR)EBO |
–7 |
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— |
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— |
V |
I |
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E = –50 mA, IC = 0 |
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voltage |
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Collector cutoff current |
ICBO |
— |
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— |
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–100 |
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A |
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VCB = –80 V, IE = 0 |
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ICEO |
— |
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— |
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–10 |
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A |
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VCE = –60 V, RBE = ∞ |
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DC current transfer ratio |
h |
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1000 |
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— |
20000 |
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V |
CE |
= –3 V, I = –2 A*1 |
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FE |
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C |
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Collector to emitter saturation |
V |
CE(sat)1 |
— |
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–1.5 |
V |
I |
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C |
= –2 A, I = –4 mA*1 |
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B |
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voltage |
V |
CE(sat)2 |
— |
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— |
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–3.0 |
V |
I |
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C |
= –4 A, I = –40 mA*1 |
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B |
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Base to emitter saturation |
V |
BE(sat)1 |
— |
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— |
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–2.0 |
V |
I |
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C |
= –2 A, I = –4 mA*1 |
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B |
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voltage |
V |
BE(sat)2 |
— |
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— |
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–3.5 |
V |
I |
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C |
= –4 A, I = –40 mA*1 |
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B |
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C to E diode forward voltage |
V |
D |
— |
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— |
3.0 |
V |
I |
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D |
= 4 A*1 |
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Turn on time |
ton |
— |
0.5 |
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— |
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s |
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IC = –2 A, IB1 = –IB2 = –4 mA |
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Storage time |
tstg |
— |
1.5 |
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— |
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s |
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Fall time |
tf |
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— |
1.0 |
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— |
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s |
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Note: 1. Pulse test. |
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2