HIT 2SB1072(S), 2SB1072(L) Datasheet

0 (0)
HIT 2SB1072(S), 2SB1072(L) Datasheet

2SB1072(L), 2SB1072(S)

Silicon PNP Triple Diffused

Application

Medium speed power amplifier

Outline

DPAK

4

2, 4

4

1

 

 

 

2 3

 

1.

Base

 

 

2.

Collector

S Type

12 3

3.

Emitter

4. Collector

L Type

1

3 kΩ (Typ)

ID

0.4 kΩ

(Typ)

3

2SB1072(L), 2SB1072(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Rating

Unit

Collector to base voltage

VCBO

–100

V

Collector to emitter voltage

VCEO

–80

V

Emitter to base voltage

VEBO

–7

V

Collector current

IC

–4

A

 

 

 

 

C to E diode forward current

ID*1

4

A

 

 

 

 

Collector peak current

IC(peak)

–8

A

Collector power dissipation

PC*1

20

W

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note: 1. Value at TC = 25°C

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

 

 

 

Typ

 

 

 

 

 

Max

 

Unit

 

Test conditions

Collector to emitter breakdown

V(BR)CEO

–80

 

 

 

 

 

 

V

I

 

 

C = –25 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–7

 

 

 

 

 

 

V

I

 

 

E = –50 mA, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

 

 

 

–100

 

A

 

VCB = –80 V, IE = 0

 

ICEO

 

 

 

–10

 

A

 

VCE = –60 V, RBE =

DC current transfer ratio

h

 

1000

 

 

 

 

 

20000

 

 

V

CE

= –3 V, I = –2 A*1

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

Collector to emitter saturation

V

CE(sat)1

 

 

 

–1.5

V

I

 

 

C

= –2 A, I = –4 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

voltage

V

CE(sat)2

 

 

 

–3.0

V

I

 

 

C

= –4 A, I = –40 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

Base to emitter saturation

V

BE(sat)1

 

 

 

–2.0

V

I

 

 

C

= –2 A, I = –4 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

voltage

V

BE(sat)2

 

 

 

–3.5

V

I

 

 

C

= –4 A, I = –40 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

C to E diode forward voltage

V

D

 

 

3.0

V

I

 

 

D

= 4 A*1

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn on time

ton

0.5

 

 

 

 

 

s

 

IC = –2 A, IB1 = –IB2 = –4 mA

Storage time

tstg

1.5

 

 

 

 

 

s

 

 

 

 

 

Fall time

tf

 

1.0

 

 

 

 

 

s

 

 

 

 

 

Note: 1. Pulse test.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

Loading...
+ 4 hidden pages