HIT 2SB1048 Datasheet

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HIT 2SB1048 Datasheet

2SB1048

Silicon PNP Epitaxial, Darlington

Application

High gain amplifier

Outline

UPAK

1

2

 

 

2,4

3

 

 

 

4

1.

Base

1

 

 

2.

Collector

 

 

3.

Emitter

 

 

4.

Collector (Flange)

3

 

 

 

2SB1048

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–60

V

Collector to emitter voltage

VCEO

–60

V

Emitter to base voltage

VEBO

–7

V

Collector current

IC

–1

A

 

 

 

 

Collector peak current

iC(peak)*1

–2

A

 

 

 

 

Collector power dissipation

PC*2

1

W

 

 

 

 

Junction temperature

Tj

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 × 30 × 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item

 

Symbol

Min

 

 

 

Typ

 

 

 

 

 

Max

Unit

Test conditions

 

Collector to base breakdown

V(BR)CBO

–60

 

 

 

 

 

 

 

V

I

C = –10 µA, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–60

 

 

 

 

 

 

 

V

I

C = –1 mA, RBE = ∞

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

 

 

 

 

–10

µA

VCB = –60 V, IE = 0

Emitter cutoff current

IEBO

 

 

 

 

–10

µA

VEB = –7 V, IE = 0

DC current transfer ratio

h

2000

 

 

 

 

 

100000

 

V

CE

= –3 V, I = –500 mA*1

 

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

 

 

Collector to emitter saturation

V

 

 

 

 

–2.0

V

I

C

= –500 mA, I

B

= –1 mA*1

voltage

 

CE(sat)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter saturation

V

 

 

 

 

–2.0

V

I

C

= –500 mA, I

B

= –1 mA*1

voltage

 

BE(sat)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes: 1.

Pulse test

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.

Marking is “BT”

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

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