2SB1048
Silicon PNP Epitaxial, Darlington
Application
High gain amplifier
Outline
UPAK
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2,4 |
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4 |
1. |
Base |
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2. |
Collector |
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3. |
Emitter |
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4. |
Collector (Flange) |
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2SB1048
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–60 |
V |
Collector to emitter voltage |
VCEO |
–60 |
V |
Emitter to base voltage |
VEBO |
–7 |
V |
Collector current |
IC |
–1 |
A |
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Collector peak current |
iC(peak)*1 |
–2 |
A |
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Collector power dissipation |
PC*2 |
1 |
W |
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Junction temperature |
Tj |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 × 30 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
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Symbol |
Min |
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Max |
Unit |
Test conditions |
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Collector to base breakdown |
V(BR)CBO |
–60 |
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— |
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— |
V |
I |
C = –10 µA, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
–60 |
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— |
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— |
V |
I |
C = –1 mA, RBE = ∞ |
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voltage |
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Collector cutoff current |
ICBO |
— |
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— |
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–10 |
µA |
VCB = –60 V, IE = 0 |
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Emitter cutoff current |
IEBO |
— |
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— |
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–10 |
µA |
VEB = –7 V, IE = 0 |
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DC current transfer ratio |
h |
2000 |
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— |
100000 |
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V |
CE |
= –3 V, I = –500 mA*1 |
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FE |
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C |
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Collector to emitter saturation |
V |
— |
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— |
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–2.0 |
V |
I |
C |
= –500 mA, I |
B |
= –1 mA*1 |
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voltage |
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CE(sat) |
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Base to emitter saturation |
V |
— |
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— |
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–2.0 |
V |
I |
C |
= –500 mA, I |
B |
= –1 mA*1 |
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voltage |
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BE(sat) |
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Notes: 1. |
Pulse test |
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2. |
Marking is “BT” |
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2