HIT 2SB1048 Datasheet

2SB1048

Silicon PNP Epitaxial, Darlington

Application

High gain amplifier

Outline

UPAK

1

2			2,4
3
4	1.	Base	1
	2.	Collector
	3.	Emitter
	4.	Collector (Flange)	3

2SB1048

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–60	V
Collector to emitter voltage	VCEO	–60	V
Emitter to base voltage	VEBO	–7	V
Collector current	IC	–1	A
Collector peak current	iC(peak)*1	–2	A
Collector power dissipation	PC*2	1	W
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 × 30 × 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

–60

—

—

V

I

C = –10 µA, IE = 0

voltage

Collector to emitter breakdown

V(BR)CEO

–60

—

—

V

I

C = –1 mA, RBE = ∞

voltage

Collector cutoff current

ICBO

—

—

–10

µA

VCB = –60 V, IE = 0

Emitter cutoff current

IEBO

—

—

–10

µA

VEB = –7 V, IE = 0

DC current transfer ratio

h

2000

—

100000

V

CE

= –3 V, I = –500 mA*1

FE

C

Collector to emitter saturation

V

—

—

–2.0

V

I

C

= –500 mA, I

B

= –1 mA*1

voltage

CE(sat)

Base to emitter saturation

V

—

—

–2.0

V

I

C

= –500 mA, I

B

= –1 mA*1

voltage

BE(sat)

Notes: 1.

Pulse test

2.

Marking is “BT”

2