2SB1028
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1
2
3
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4 |
1. |
Base |
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2. |
Collector |
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3. |
Emitter |
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4. |
Collector (Flange) |
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2SB1028
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–180 |
V |
Collector to emitter voltage |
VCEO |
–160 |
V |
Emitter to base voltage |
VEBO |
–5 |
V |
Collector current |
IC |
–1.5 |
A |
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Collector peak current |
iC(peak)*1 |
–3 |
A |
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Collector power dissipation |
PC*2 |
1 |
W |
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Junction temperature |
Tj |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item |
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Symbol |
Min |
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Typ |
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Max |
Unit |
Test conditions |
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Collector to base breakdown |
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V(BR)CBO |
–180 |
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— |
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— |
V |
I |
C = –1 mA, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
–160 |
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— |
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— |
V |
I |
C = –10 mA, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
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V(BR)EBO |
–5 |
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— |
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— |
V |
I |
E = –1 mA, IC = 0 |
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voltage |
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Collector cutoff current |
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ICBO |
— |
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— |
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–10 |
µA |
VCB = –160 V, IE = 0 |
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DC current transfer ratio |
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h *1 |
60 |
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— |
200 |
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V |
CE |
= –5 V, I = –0.15 A, |
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FE1 |
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C |
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pulse |
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hFE2 |
30 |
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— |
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— |
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V |
CE = –5 V, IC = –0.5 A, |
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pulse |
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Collector to emitter saturation |
VCE(sat) |
— |
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— |
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–1.0 |
V |
I |
C = –0.5 A, IB = –50 mA, |
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voltage |
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Pulse |
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Base to emitter voltage |
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VBE |
— |
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— |
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–0.9 |
V |
V |
CE = –5 V, IC = –0.15 A, |
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pulse |
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Note: 1. The 2SB1028 is grouped by hFE1 as follows. |
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Mark |
EL |
EM |
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hFE1 |
60 to 120 |
100 to 200 |
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2