HIT 2SB1027 Datasheet

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HIT 2SB1027 Datasheet

2SB1027

Silicon PNP Epitaxial

Application

Low frequency amplifier

Outline

UPAK

1

2

3

 

 

 

 

 

 

 

 

 

 

 

 

4

1.

Base

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.

Collector

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.

Emitter

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4.

Collector (Flange)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2SB1027

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–180

V

Collector to emitter voltage

VCEO

–120

V

Emitter to base voltage

VEBO

–5

V

Collector current

IC

–1.5

A

 

 

 

 

Collector peak current

iC(peak)*1

–3

A

 

 

 

 

Collector power dissipation

PC*2

1

W

 

 

 

 

Junction temperature

Tj

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

–180

V

I

C = –1 mA, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–120

V

I

C = –10 mA, RBE = ∞

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–5

V

I

E = –1 mA, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–10

µA

VCB = –160 V, IE = 0

DC current transfer ratio

h *1

60

320

 

V

CE

= –5 V, I = –0.15 A,

 

FE1

 

 

 

 

 

 

C

 

 

 

 

 

 

pulse

 

 

 

 

 

 

 

 

 

 

hFE2

30

 

V

CE = –5 V, IC = –0.5 A,

 

 

 

 

 

 

pulse

 

 

 

 

 

 

 

 

 

Collector to emitter saturation

VCE(sat)

–1.0

V

I

C = –0.5 A, IB = –50 mA,

voltage

 

 

 

 

 

Pulse

 

 

 

 

 

 

 

 

 

Base to emitter voltage

VBE

–0.9

V

V

CE = –5 V, IC = –0.15 A,

 

 

 

 

 

 

pulse

 

Note: 1. The 2SB1027 is grouped by hFE1 as follows.

Mark

EH

EJ

EK

 

hFE1

60 to 120

100 to 200

160 to 320

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

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