2SB1026
Silicon PNP Epitaxial
Application
•Low frequency power amplifier
•Complementary pair with 2SD1419
Outline
UPAK
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1. |
Base |
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2. |
Collector |
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3. |
Emitter |
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4. |
Collector (Flange) |
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2SB1026
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–120 |
V |
Collector to emitter voltage |
VCEO |
–100 |
V |
Emitter to base voltage |
VEBO |
–5 |
V |
Collector current |
IC |
–1 |
A |
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Collector peak current |
iC(peak)*1 |
–2 |
A |
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Collector power dissipation |
PC*2 |
1 |
W |
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Junction temperature |
Tj |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item |
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Symbol |
Min |
Typ |
Max |
Unit |
Test conditions |
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Collector to base breakdown |
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V(BR)CBO |
–120 |
— |
— |
V |
I |
C = –10 µA, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
–100 |
— |
— |
V |
I |
C = –1 mA, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
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V(BR)EBO |
–5 |
— |
— |
V |
I |
E = –10 µA, IC = 0 |
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voltage |
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Collector cutoff current |
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ICBO |
— |
— |
–10 |
µA |
VCB = –100 V, IE = 0 |
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DC current transfer ratio |
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h *1 |
60 |
— |
200 |
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V |
CE |
= –5 V, I = –150 mA |
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FE1 |
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C |
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hFE2 |
30 |
— |
— |
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V |
CE = –5 V, |
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IC = –500 mA (Pulse test) |
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Collector to emitter saturation |
VCE(sat) |
— |
— |
–1 |
V |
I |
C = –500 mA, |
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voltage |
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IB = –50 mA (Pulse test) |
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Base to emitter voltage |
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VBE |
— |
— |
–0.9 |
V |
V |
CE = –5 V, IC = –150 mA |
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Gain bandwidth product |
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fT |
— |
140 |
— |
MHz |
V |
CE = –5 V, IC = –150 mA |
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Collector output capacitance |
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Cob |
— |
20 |
— |
pF |
V |
CB = –10 V, IE = 0, |
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f = 1 MHz |
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Note: 1. The 2SB1026 is grouped by hFE1 as follows. |
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Mark |
DL |
DM |
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hFE1 |
60 to 120 |
100 to 200 |
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See characteristic curves of 2SB1025.
2