HIT 2SB1026 Datasheet

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HIT 2SB1026 Datasheet

2SB1026

Silicon PNP Epitaxial

Application

Low frequency power amplifier

Complementary pair with 2SD1419

Outline

UPAK

1

2

3

 

 

 

 

 

 

 

 

 

 

 

 

4

1.

Base

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.

Collector

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.

Emitter

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4.

Collector (Flange)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2SB1026

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–120

V

Collector to emitter voltage

VCEO

–100

V

Emitter to base voltage

VEBO

–5

V

Collector current

IC

–1

A

 

 

 

 

Collector peak current

iC(peak)*1

–2

A

 

 

 

 

Collector power dissipation

PC*2

1

W

 

 

 

 

Junction temperature

Tj

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

 

V(BR)CBO

–120

V

I

C = –10 µA, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–100

V

I

C = –1 mA, RBE = ∞

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

 

V(BR)EBO

–5

V

I

E = –10 µA, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

 

ICBO

–10

µA

VCB = –100 V, IE = 0

DC current transfer ratio

 

h *1

60

200

 

V

CE

= –5 V, I = –150 mA

 

 

 

FE1

 

 

 

 

 

 

C

 

 

 

hFE2

30

 

V

CE = –5 V,

 

 

 

 

 

 

 

 

 

IC = –500 mA (Pulse test)

 

 

 

 

 

 

 

 

Collector to emitter saturation

VCE(sat)

–1

V

I

C = –500 mA,

voltage

 

 

 

 

 

 

 

IB = –50 mA (Pulse test)

 

 

 

 

 

 

 

 

 

Base to emitter voltage

 

VBE

–0.9

V

V

CE = –5 V, IC = –150 mA

Gain bandwidth product

 

fT

140

MHz

V

CE = –5 V, IC = –150 mA

 

 

 

 

 

 

 

 

 

Collector output capacitance

 

Cob

20

pF

V

CB = –10 V, IE = 0,

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

 

 

 

 

 

 

Note: 1. The 2SB1026 is grouped by hFE1 as follows.

 

 

 

 

 

 

Mark

DL

DM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE1

60 to 120

100 to 200

 

 

 

 

 

 

 

 

See characteristic curves of 2SB1025.

2

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