HIT 2SB1025 Datasheet
Silicon PNP Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SD1418
Outline
UPAK
2SB1025
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SB1025
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
1
*
2
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
h
V
CBO
FE1
FE2
CE(sat)
voltage
Base to emitter voltage V
Gain bandwidth product f
BE
T
Collector output capacitance Cob — 20 — pF VCB = –10 V, IE = 0,
Note: 1. The 2SB1025 is grouped by h
Mark DH DJ DK
h
FE1
60 to 120 100 to 200 160 to 320
–120 — — V IC = –10 µA, IE = 0
–80 — — V IC = –1 mA, RBE = ∞
–5——V I
— — –10 µAVCB = –100 V, IE = 0
1
*
60 — 320 VCE = –5 V, IC = –150 mA
30 — — VCE = –5 V,
——–1V I
— — –0.9 V VCE = –5 V, IC = –150 mA
— 140 — MHz VCE = –5 V, IC = –150 mA
as follows.
FE1
–120 V
–80 V
–5 V
–1 A
–2 A
1W
= –10 µA, IC = 0
E
I
= –500 mA (Pulse test)
C
= –500 mA,
C
I
= –50 mA (Pulse test)
B
f = 1 MHz
2
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