2SB1012(K)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD1376(K)
Outline
TO-126 MOD
|
|
|
2 |
|
|
3 |
|
|
1. |
Emitter |
ID |
|
2. |
Collector |
|
|
|
||
1 2 |
3. |
Base |
1 kΩ |
3 |
5 kΩ |
||
|
(Typ) |
(Typ) |
|
|
|
|
1 |
2SB1012(K)
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Rating |
Unit |
Collector to base voltage |
VCBO |
–120 |
V |
Collector to emitter voltage |
VCEO |
–120 |
V |
Emitter to base voltage |
VEBO |
–7 |
V |
Collector current |
IC |
–1.5 |
A |
|
|
|
|
Collector peak current |
IC(peak) |
–3.0 |
A |
Collector power dissipation |
PC*1 |
20 |
W |
|
|
|
|
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
C to E diode forward current |
ID*1 |
1.5 |
A |
|
|
|
|
Note: 1. Value at TC = 25°C |
|
|
|
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
|
|
|
Typ |
|
|
|
|
|
Max |
|
Unit |
|
Test conditions |
||||||||||||
Collector to emitter breakdown |
V(BR)CEO |
–120 |
|
|
|
— |
|
|
|
— |
V |
I |
|
|
C = –10 mA, RBE = ∞ |
|||||||||||||
voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||||
Emitter to base breakdown |
V(BR)EBO |
–7 |
|
|
|
— |
|
|
|
— |
V |
I |
|
|
E = –50 mA, IC = 0 |
|||||||||||||
voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||||||||
Collector cutoff current |
ICBO |
— |
|
|
— |
|
–100 |
|
A |
|
VCB = –120 V, IE = 0 |
|||||||||||||||||
|
ICEO |
— |
|
|
— |
|
–10 |
|
A |
|
VCE = –100 V, RBE = ∞ |
|||||||||||||||||
DC current transfer ratio |
h |
|
2000 |
|
|
|
|
|
— |
30000 |
|
|
V |
CE |
= –3 V, I = –1 A*1 |
|||||||||||||
|
FE |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
C |
|||
Collector to emitter saturation |
V |
CE(sat)1 |
— |
|
|
— |
|
–1.5 |
V |
I |
|
|
C |
= –1 A, I = –1 mA*1 |
||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
B |
||
voltage |
V |
CE(sat)2 |
— |
|
|
— |
|
–2.0 |
V |
I |
|
|
C |
= –1.5 A, I = –1.5 mA*1 |
||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
B |
||
Base to emitter saturation |
V |
BE(sat)1 |
— |
|
|
— |
|
–2.0 |
V |
I |
|
|
C |
= –1 A, I = –1 mA*1 |
||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
B |
||
voltage |
V |
BE(sat)2 |
— |
|
|
— |
|
–2.5 |
V |
I |
|
|
C |
= –1.5 A, I = –1.5 mA*1 |
||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
B |
||
C to E diode forward voltage |
V |
D |
— |
|
|
— |
3.0 |
V |
I |
|
|
D |
= 1.5 A*1 |
|||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||||||
Turn on time |
ton |
— |
0.5 |
|
|
|
|
— |
|
s |
|
IC = –1 A, IB1 = –IB2 = –1 mA |
||||||||||||||||
Turn off time |
toff |
— |
2.0 |
|
|
|
|
— |
|
s |
|
|
|
|
|
|||||||||||||
Note: 1. Pulse test |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2