HIT 2SB1012(K) Datasheet

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HIT 2SB1012(K) Datasheet

2SB1012(K)

Silicon PNP Epitaxial

Application

Low frequency power amplifier complementary pair with 2SD1376(K)

Outline

TO-126 MOD

 

 

 

2

 

 

3

 

 

1.

Emitter

ID

 

2.

Collector

 

 

1 2

3.

Base

1 kΩ

3

5 kΩ

 

(Typ)

(Typ)

 

 

 

1

2SB1012(K)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Rating

Unit

Collector to base voltage

VCBO

–120

V

Collector to emitter voltage

VCEO

–120

V

Emitter to base voltage

VEBO

–7

V

Collector current

IC

–1.5

A

 

 

 

 

Collector peak current

IC(peak)

–3.0

A

Collector power dissipation

PC*1

20

W

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

C to E diode forward current

ID*1

1.5

A

 

 

 

 

Note: 1. Value at TC = 25°C

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

 

 

 

Typ

 

 

 

 

 

Max

 

Unit

 

Test conditions

Collector to emitter breakdown

V(BR)CEO

–120

 

 

 

 

 

 

V

I

 

 

C = –10 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–7

 

 

 

 

 

 

V

I

 

 

E = –50 mA, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

 

 

 

–100

 

A

 

VCB = –120 V, IE = 0

 

ICEO

 

 

 

–10

 

A

 

VCE = –100 V, RBE =

DC current transfer ratio

h

 

2000

 

 

 

 

 

30000

 

 

V

CE

= –3 V, I = –1 A*1

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

Collector to emitter saturation

V

CE(sat)1

 

 

 

–1.5

V

I

 

 

C

= –1 A, I = –1 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

voltage

V

CE(sat)2

 

 

 

–2.0

V

I

 

 

C

= –1.5 A, I = –1.5 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

Base to emitter saturation

V

BE(sat)1

 

 

 

–2.0

V

I

 

 

C

= –1 A, I = –1 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

voltage

V

BE(sat)2

 

 

 

–2.5

V

I

 

 

C

= –1.5 A, I = –1.5 mA*1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

C to E diode forward voltage

V

D

 

 

3.0

V

I

 

 

D

= 1.5 A*1

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn on time

ton

0.5

 

 

 

 

 

s

 

IC = –1 A, IB1 = –IB2 = –1 mA

Turn off time

toff

2.0

 

 

 

 

 

s

 

 

 

 

 

Note: 1. Pulse test

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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