2SB1001
Silicon PNP Epitaxial
Application
•Low frequency power amplifier
•Complementary pair with 2SD1367
Outline
UPAK
1
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4 |
1. |
Base |
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2. |
Collector |
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3. |
Emitter |
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4. |
Collector (Flange) |
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2SB1001
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–20 |
V |
Collector to emitter voltage |
VCEO |
–16 |
V |
Emitter to base voltage |
VEBO |
–6 |
V |
Collector current |
IC |
–2 |
A |
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Collector peak current |
iC(peak) *1 |
–3 |
A |
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Collector power dissipation |
PC*2 |
1 |
W |
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Junction temperature |
Tj |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item |
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Symbol |
Min |
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Typ |
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Max |
Unit |
Test conditions |
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Collector to base breakdown |
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V(BR)CBO |
–20 |
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— |
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— |
V |
I |
C = –10 µA, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
–16 |
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— |
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— |
V |
I |
C = –1 mA, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
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V(BR)EBO |
–6 |
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— |
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— |
V |
I |
E = –10 µA, IC = 0 |
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voltage |
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Collector cutoff current |
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ICBO |
— |
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— |
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–0.1 |
µA |
VCB = –16 V, IE = 0 |
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Emitter cutoff current |
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IEBO |
— |
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— |
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–0.1 |
µA |
VEB = –5 V, IC = 0 |
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DC current transfer ratio |
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h *1 |
100 |
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— |
320 |
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V |
CE |
= –2 V, |
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FE |
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IC = –0.1 A (Pulse test) |
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Collector to emitter saturation |
VCE(sat) |
— |
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–0.15 |
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–0.3 |
V |
I C = –1 A, |
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voltage |
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IB = –0.1 A (Pulse test) |
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Base to emitter saturation |
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VBE(sat) |
— |
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–1.0 |
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–1.2 |
V |
I C = –1 A, |
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voltage |
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IB = –0.1 A (Pulse test) |
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Gain bandwidth product |
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fT |
— |
150 |
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— |
MHz |
V |
CE = –2 V, |
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IC = –10 mA |
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Collector output capacitance |
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Cob |
— |
50 |
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— |
pF |
V |
CB = –10 V, IE = 0, |
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f = 1 MHz |
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Note: 1. The 2SB1001 is grouped by hFE as follows. |
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Mark |
BH |
BJ |
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hFE |
100 to 200 |
160 to 320 |
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2