HIT 2SA893A, 2SA893 Datasheet
2SA893, 2SA893A
Silicon PNP Epitaxial
Application
• Low frequency high voltage amplifier
• Complementary pair with 2SC1890/A
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA893, 2SA893A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA893 2SA893A Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SA893 2SA893A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to emitter
breakdown voltage
Collector cutoff current I
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Noise figure NF — 2 10 — 2 10 dB VCE = –6 V,
Note: 1. The 2SA893/A is grouped by hFE as follows.
DE
250 to 500 400 to 800
V
(BR)CEO
CBO
–90 — — –120 — — V IC = –1 mA, RBE = ∞
— — –0.5 — — — µAVCB = –75 V, IE = 0
— — — — — –0.5 µAVCB = –100 V, IE = 0
1
250 — 800 250 — 800 VCE = –12 V,
— — –0.75 — — –0.75 V VCE = –12 V,
— — –0.5 — — –0.5 V IC = –10 mA,
— 120 — — 120 — MHz VCE = –12 V,
V
BE
CE(sat)
T
Cob — 1.8 — — 1.8 — pF V
–90 –120 V
–90 –120 V
–5 –5 V
–50 –50 mA
300 300 mW
I
= –2 mA
C
I
= –2 mA
C
I
= –1 mA
B
I
= –2 mA
C
= –25 V, IE = 0,
CB
f = 1 MHz
I
= –50 µA
C
R
= 50 kΩ, f = 1 kHz
g
See characteristic curves of 2SA872 and 2SA872A
2
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