HIT 2SA844 Datasheet

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HIT 2SA844 Datasheet

2SA844

Silicon PNP Epitaxial

Application

Low frequency amplifier

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SA844

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–55

V

Collector to emitter voltage

VCEO

–55

V

Emitter to base voltage

VEBO

–5

V

Collector current

IC

–100

mA

 

 

 

 

Emitter current

IE

100

mA

 

 

 

 

Collector power dissipation

PC

300

mW

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

–55

V

I

C = –10 A, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–55

V

I

C = –1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–5

V

I

E = –10 A, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–100

nA

V

CB = –18 V, IE = 0

Emitter cutoff current

IEBO

–50

nA

V

EB = –2 V, IC = 0

DC current transfer ratio

h *1

160

800

 

V

CE

= –12 V, I = –2 mA

 

FE

 

 

 

 

 

C

Collector to emitter saturation

VCE(sat)

–0.1

–0.5

V

I C = –10 mA, IB = –1 mA

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

VBE

–0.66

–0.75

V

V CE = –12 V, IC = –2 mA

Gain bandwidth product

fT

200

MHz

V

CE = –12 V, IE = –2 mA

 

 

 

 

 

 

 

 

Collector output capacitance

Cob

2.0

pF

V

CB = –10 V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

 

 

Note: 1. The 2SA844 is grouped by hFE as follows.

C

D

E

160 to 320

250 to 500

400 to 800

 

 

 

See characteristic curves of 2SA836.

2

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