2SA836
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA836
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–55 |
V |
Collector to emitter voltage |
VCEO |
–55 |
V |
Emitter to base voltage |
VEBO |
–5 |
V |
Collector current |
IC |
–100 |
mA |
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Emitter current |
IE |
100 |
mA |
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Collector power dissipation |
PC |
200 |
mW |
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Junction temperature |
Tj |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test conditions |
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Collector to base breakdown |
V(BR)CBO |
–55 |
— |
— |
V |
I |
C = –10 µA, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
–55 |
— |
— |
V |
I |
C = –1 mA, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
V(BR)EBO |
–5 |
— |
— |
V |
I |
E = –10 µA, IC = 0 |
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voltage |
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Collector cutoff current |
ICBO |
— |
— |
–100 |
nA |
V |
CB = –18 V, IE = 0 |
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Emitter cutoff current |
IEBO |
— |
— |
–50 |
nA |
V |
EB = –2 V, IC = 0 |
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DC current transfer ratio |
h *1 |
160 |
— |
500 |
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V |
CE |
= –12 V, I |
= –2 mA |
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FE |
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C |
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Collector to emitter saturation |
VCE(sat) |
— |
–0.1 |
–0.5 |
V |
I C = –10 mA, IB = –1 mA |
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voltage |
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Base to emitter voltage |
VBE |
— |
–0.66 |
–0.75 |
V |
V CE = –12 V, IC = –2 mA |
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Gain bandwidth product |
fT |
— |
200 |
— |
MHz |
V |
CE = –12 V, IE = –2 mA |
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Collector output capacitance |
Cob |
— |
2.0 |
— |
pF |
V |
CB = –10 V, IE = 0, f = 1MHz |
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Noise figuer |
NF |
— |
1 |
5 |
dB |
V CE = –6 V, |
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f = 10 Hz |
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— |
0.5 |
1 |
dB |
I C = –0.1mA, |
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f = 1 kHz |
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Rg = 10 kΩ |
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Note: 1. The 2SA836 is grouped by hFE as follows.
C |
D |
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160 to 320 |
250 to 500 |
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