HIT 2SA715 Datasheet

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2SA715

Silicon PNP Epitaxial

Application

Low frequency power amplifier complementary pair with 2SC1162

Outline

TO-126 MOD

1.

Emitter

2.

Collector

3.

Base

1

2 3

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Rating

Unit

Collector to base voltage

VCBO

–35

V

Collector to emitter voltage

VCEO

–35

V

Emitter to base voltage

VEBO

–5

V

Collector current

IC

–2.5

A

 

 

 

 

Collector peak current

IC(peak)

–3

A

Collector power dissipation

PC

0.75

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PC*1

10

W

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note: 1. Value at TC = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

HIT 2SA715 Datasheet

2SA715

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

 

V(BR)CBO

–35

V

I

C = –1 mA, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–35

V

I

C = –10 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

 

V(BR)EBO

–5

V

I

E = –1 mA, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

 

ICBO

–20

A

VCB = –35 V, IE = 0

DC current transfer ratio

 

h *1

60

320

 

V

CE

= –2 V, I = –0.5 A

 

 

 

FE

 

 

 

 

 

 

C

 

 

 

hFE

20

 

V

CE = –2 V, IC = –1.5 A

 

 

 

 

 

 

 

 

(Pulse test)

 

 

 

 

 

 

 

 

 

Base to emitter voltage

 

VBE

–1.0

–1.5

V

V CE = –2 V, IC = –1.5 A

 

 

 

 

 

 

 

 

(Pulse test)

 

 

 

 

 

 

 

 

Collector to emitter saturation

VCE(sat)

–0.5

–1.0

V

I C = –2 A, IB = –0.2 A

voltage

 

 

 

 

 

 

 

(Pulse test)

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

 

fT

160

MHz

V

CE = –2 V, IC = –0.2 A

 

 

 

 

 

 

 

 

(Pulse test)

 

 

 

 

 

 

 

 

Note: 1. The 2SA715 is grouped by hFE as follows.

 

 

 

 

 

 

B

C

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

60 to 120

100 to 200

160 to 320

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector power dissipation Pc (W)

 

Maximum Collector Dissipation

 

 

 

 

 

 

 

 

 

 

Curve

 

 

 

 

 

Area of Safe Operation

 

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

–5

 

 

TC = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(A)

 

 

(–4 V,–2.5 A)

 

 

0.6

 

 

 

 

–2 IC max(DC Operation)

P

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

=

 

 

 

 

 

 

 

current

–1.0

 

 

10

 

 

 

 

 

 

 

 

 

W

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector

–0.5

 

 

 

 

 

0.2

 

 

 

 

 

 

 

(–35 V,–0.28 A)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

–0.2

 

 

 

 

 

 

 

 

 

 

 

–0.1

 

 

 

 

 

0

50

100

150

200

 

–1

–2

–5

–10

–20

–50

 

Ambient temperature

Ta (°C)

 

 

 

Collector to emitter voltage

VCE (V)

 

2

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