HIT 2SA1810 Datasheet

2SA1810

Silicon PNP Epitaxial

Application

High frequency amplifier

Features

•Excellent high frequency characteristics fT = 300 MHz typ

•High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ

•Suitable for wide band video amplifier

Outline

TO-126 MOD

1. Emitter

2. Collector

3. Base

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2SA1810

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–200	V
Collector to emitter voltage	VCEO	–200	V
Emitter to base voltage	VEBO	–5	V
Collector current	IC	–0.2	A
Collector peak current	IC(peak)	–0.5	A
Collector power dissipation	PC	1.25	W
	PC*1	10
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C
Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit	Test conditions
Collector to base breakdown	V(BR)CBO	–200	—	—	V	I	C = –10 A, IE = 0
voltage
Collector to emitter breakdown	V(BR)CEO	–200	—	—	V	I	C = –1 mA, RBE = ∞
voltage
Emitter to base breakdown	V(BR)EBO	–5	—	—	V	I	E = –10 A, IC = 0
voltage
Collector cutoff current	ICBO	—	—	–10	A	VCB = –160 V, IE = 0
DC current transfer ratio	h *1	60	—	200		V	CE	= –5 V, I = –10 mA
	FE							C
Base to emitter voltage	VBE	—	—	–1.0	V	V	CE = –5 V, IC = –30 mA
Collector to emitter saturation	VCE(sat)	—	—	–1.0	V	I	C = –30 mA, IB = –3 mA
voltage
Gain bandwidth product	fT	200	300	—	MHz	V CE = –20 V, IC = –30 mA
Collector output capacitance	Cob	—	5.0	—	pF	V	CB = –30 V, IE = 0, f = 1 MHz

Note: 1. The 2SA1810 is grouped by hFE as follows.

B

C

60 to 120

100 to 200

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