2SA1810
Silicon PNP Epitaxial
Application
High frequency amplifier
Features
•Excellent high frequency characteristics fT = 300 MHz typ
•High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ
•Suitable for wide band video amplifier
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
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2 3
2SA1810
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–200 |
V |
Collector to emitter voltage |
VCEO |
–200 |
V |
Emitter to base voltage |
VEBO |
–5 |
V |
Collector current |
IC |
–0.2 |
A |
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Collector peak current |
IC(peak) |
–0.5 |
A |
Collector power dissipation |
PC |
1.25 |
W |
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PC*1 |
10 |
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Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Note: 1. Value at TC = 25°C. |
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Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
Test conditions |
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Collector to base breakdown |
V(BR)CBO |
–200 |
— |
— |
V |
I |
C = –10 A, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
–200 |
— |
— |
V |
I |
C = –1 mA, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
V(BR)EBO |
–5 |
— |
— |
V |
I |
E = –10 A, IC = 0 |
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voltage |
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Collector cutoff current |
ICBO |
— |
— |
–10 |
A |
VCB = –160 V, IE = 0 |
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DC current transfer ratio |
h *1 |
60 |
— |
200 |
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V |
CE |
= –5 V, I = –10 mA |
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FE |
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C |
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Base to emitter voltage |
VBE |
— |
— |
–1.0 |
V |
V |
CE = –5 V, IC = –30 mA |
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Collector to emitter saturation |
VCE(sat) |
— |
— |
–1.0 |
V |
I |
C = –30 mA, IB = –3 mA |
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voltage |
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Gain bandwidth product |
fT |
200 |
300 |
— |
MHz |
V CE = –20 V, IC = –30 mA |
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Collector output capacitance |
Cob |
— |
5.0 |
— |
pF |
V |
CB = –30 V, IE = 0, f = 1 MHz |
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Note: 1. The 2SA1810 is grouped by hFE as follows.
B |
C |
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60 to 120 |
100 to 200 |
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