HIT 2SA1617 Datasheet

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Application
High voltage amplifier
Outline
MPAK
2SA1617
Silicon PNP Epitaxial
3
1
2
1. Emitter
2. Base
2SA1617
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage Collector to emitter breakdown
V
(BR)CEO
voltage Emitter to base breakdown
V
(BR)EBO
voltage Collector cutoff current I Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE* Collector to emitter saturation
V
CE(sat)
voltage Base to emitter voltage V
BE
Note: 1. The 2SA1617 is grouped by hFE as follows.
Grade B C
Mark VIB VIC h
FE
100 to 200 160 to 320
–55 V IC = –10 µA, IE = 0
–50 V IC = –1 mA, RBE =
–5 V IE = –10 µA, IC = 0
–0.5 µAV — –0.5 µAV
1
100 320 V — –0.2 V IC = –10 mA, IB = –1 mA
–0.8 V VCE = –12 V, IC = –2 mA
–55 V –50 V –5 V –100 mA 150 mW
= –30 V, IE = 0
CB
= –2 V, IC = 0
EB
= –12 V, IC = –2 mA
CE
See charcteristic curves of 2SA1031
2
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