HIT 2SA1485 Datasheet

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HIT 2SA1485 Datasheet

2SA1485

Silicon PNP Epitaxial

Application

Low frequency amplifier

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SA1485

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–200

V

Collector to emitter voltage

VCEO

–200

V

Emitter to base voltage

VEBO

–5

V

Collector current

IC

–100

mA

 

 

 

 

Collector power dissipation

PC

200

mW

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

–200

V

I

C = –10 A, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–200

V

I

C = –0.5 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–5

V

I

E = –10 A, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICEO

–500

A

VCE = –200 V, RBE =

DC current transfer ratio

h

 

100

250

 

V

CE

= –12 V, I

 

= –2 mA*1

 

FE

 

 

 

 

 

C

 

Collector to emitter saturation

V

CE(sat)

–0.5

V

I

C

= –30 mA, I

B

= –3 mA*1

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

V

BE

–1.0

V

V

CE

= –12 V, I

 

= –2 mA*1

 

 

 

 

 

 

 

C

 

Note: 1. Pulse test

2

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