2SA1485
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1485
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–200 |
V |
Collector to emitter voltage |
VCEO |
–200 |
V |
Emitter to base voltage |
VEBO |
–5 |
V |
Collector current |
IC |
–100 |
mA |
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Collector power dissipation |
PC |
200 |
mW |
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Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
Test conditions |
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Collector to base breakdown |
V(BR)CBO |
–200 |
— |
— |
V |
I |
C = –10 A, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
–200 |
— |
— |
V |
I |
C = –0.5 mA, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
V(BR)EBO |
–5 |
— |
— |
V |
I |
E = –10 A, IC = 0 |
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voltage |
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Collector cutoff current |
ICEO |
— |
— |
–500 |
A |
VCE = –200 V, RBE = ∞ |
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DC current transfer ratio |
h |
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100 |
— |
250 |
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V |
CE |
= –12 V, I |
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= –2 mA*1 |
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FE |
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C |
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Collector to emitter saturation |
V |
CE(sat) |
— |
— |
–0.5 |
V |
I |
C |
= –30 mA, I |
B |
= –3 mA*1 |
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voltage |
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Base to emitter voltage |
V |
BE |
— |
— |
–1.0 |
V |
V |
CE |
= –12 V, I |
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= –2 mA*1 |
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C |
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Note: 1. Pulse test
2