HIT 2SA1484 Datasheet

Application
Low frequency amplifier
Outline
MPAK
2SA1484
Silicon PNP Epitaxial
3
1
2
1. Emitter
2. Base
2SA1484
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage Collector to emitter breakdown
V
(BR)CEO
voltage Emitter to base breakdown
V
(BR)EBO
voltage Collector cutoff current I Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE* Collector to emitter saturation
V
CE(sat)
voltage Base to emitter saturation
V
BE(sat)
voltage Notes: 1. The 2SA1484 is grouped by hFE as follows.
2. Pulse test
Grade D E
Mark IRD IRE h
FE
250 to 500 400 to 800
–90 V IC = –10 µA, IE = 0
–90 V IC = –1 mA, RBE =
–5 V IE = –10 µA, IC = 0
–0.1 µAV — –0.1 µAV
1
250 800 V — –0.15 V IC = –10 mA, IB = –1 mA*
–1.0 V IC = –10 mA, IB = –1 mA*
–90 V –90 V –5 V –100 mA 150 mW
= –70 V, IE = 0
CB
= –2 V, IC = 0
EB
= –12 V, IC = –2 mA*
CE
2
2
2
2
2SA1484
Maximum Collector Dissipation Curve
150
100
50
Collector power dissipation Pc (mW)
0 50 100 150
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
–10
–8
(mA)
C
P
= 150 mW
C
–20
–18
–16
–6
–4
–2
Collector Current I
0 –4 –8 –12 –16 –20
Collector to Emitter Voltage V
–14 –12
–10
–8 –6
–4
–2 µA
I
B
(V)
CE
= 0
Typical Output Characteristics (1)
–20
–30
–16
(mA)
C
–12
P
C
= 150 mW
–8
–4
Collector Current I
–25
–20
–15
–10
–5 µA
IB = 0
0 –100–80–60–40–20
Collector to Emitter Voltage V
Typical Transfer Characteristics
–100
VCE = –6 V Pulse
(mA)
C
–10
75
25
–1.0
Collector Current I
–0.1
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage V
(V)
CE
Ta = –25°C
(V)
BE
3
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