HIT 2SA1390 Datasheet

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HIT 2SA1390 Datasheet

2SA1390

Silicon PNP Epitaxial

Application

Low frequency amplifier

Outline

SPAK

1 2 3

1.

Emitter

2.

Collector

 

3.

Base

2SA1390

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–35

V

Collector to emitter voltage

VCEO

–35

V

Emitter to base voltage

VEBO

–4

V

Collector current

IC

–500

mA

 

 

 

 

Collector power dissipation

PC

300

mW

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

 

V(BR)CBO

–35

V

I

C = –10 A, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–35

V

I

C = –1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

 

V(BR)EBO

–4

V

I

E = –10 A, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

 

ICBO

–0.5

A

VCB = –20 V, IE = 0

Collector to emitter saturation

V

CE(sat)

–0.2

–0.6

V

I

C

= –150 mA, I = –15 mA*2

voltage

 

 

 

 

 

 

 

 

 

 

B

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC current transfer ratio

 

h *1

60

320

 

V

CE

= –3 V, I = –10 mA

 

 

 

FE1

 

 

 

 

 

 

C

DC current transfer ratio

 

h

 

10

 

V

CE

= –3 V, I = –500 mA*2

 

 

 

FE2

 

 

 

 

 

 

C

Base to emitter voltage

 

VBE

–0.64

V

V

CE = –3 V, IC = –10 mA

Notes: 1. The 2SA1390 is grouped by hFE1 as follows.

 

 

 

 

 

 

2.

Pulse test

 

 

 

 

 

 

 

 

 

 

 

 

B

C

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

60 to 120

100 to 200

160 to 320

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

See characteristic curves of 2SA673.

2

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