2SA1374
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
SPAK
1 2 3 |
1. |
Emitter |
2. |
Collector |
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3. |
Base |
2SA1374
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–55 |
V |
Collector to emitter voltage |
VCEO |
–55 |
V |
Emitter to base voltage |
VEBO |
–5 |
V |
Collector current |
IC |
–100 |
mA |
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Base current |
IB |
–30 |
mA |
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Collector power dissipation |
PC |
300 |
mW |
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Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
Test conditions |
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Collector to base breakdown |
V(BR)CBO |
–55 |
— |
— |
V |
I |
C = –10 A, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
–55 |
— |
— |
V |
I |
C = –1 mA, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
V(BR)EBO |
–5 |
— |
— |
V |
I |
E = –10 A, IC = 0 |
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voltage |
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Collector cutoff current |
ICBO |
— |
— |
–0.1 |
A |
VCB = –18 V, IE = 0 |
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Emitter cutoff current |
IEBO |
— |
— |
–0.05 |
A |
VEB = –2 V, IE = 0 |
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DC current transfer ratio |
h *1 |
160 |
— |
500 |
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V |
CE |
= –12 V, I = –2 mA |
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FE |
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C |
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Base to emitter voltage |
VBE |
— |
–0.66 |
–0.75 |
V |
V CE = –12 V, IC = –2 mA |
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Collector to emitter saturation |
VCE(sat) |
— |
–0.1 |
–0.5 |
V |
I C = –10 mA, IB = –1 mA |
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voltage |
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Gain bandwidth product |
fT |
— |
250 |
— |
MHz |
V |
CE = –12 V, IC = –2 mA |
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Collector output capacitance |
Cob |
— |
2.5 |
— |
pF |
V |
CB = –10 V, IE = 0, f = 1 MHz |
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Note: 1. The 2SA1374 is grouped by hFE as follows.
C |
D |
160 to 320 |
250 to 500 |
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See characteristic curves of 2SA836.
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