HIT 2SA1374 Datasheet

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HIT 2SA1374 Datasheet

2SA1374

Silicon PNP Epitaxial

Application

Low frequency amplifier

Outline

SPAK

1 2 3

1.

Emitter

2.

Collector

 

3.

Base

2SA1374

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–55

V

Collector to emitter voltage

VCEO

–55

V

Emitter to base voltage

VEBO

–5

V

Collector current

IC

–100

mA

 

 

 

 

Base current

IB

–30

mA

 

 

 

 

Collector power dissipation

PC

300

mW

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

–55

V

I

C = –10 A, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–55

V

I

C = –1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–5

V

I

E = –10 A, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–0.1

A

VCB = –18 V, IE = 0

Emitter cutoff current

IEBO

–0.05

A

VEB = –2 V, IE = 0

DC current transfer ratio

h *1

160

500

 

V

CE

= –12 V, I = –2 mA

 

FE

 

 

 

 

 

C

Base to emitter voltage

VBE

–0.66

–0.75

V

V CE = –12 V, IC = –2 mA

Collector to emitter saturation

VCE(sat)

–0.1

–0.5

V

I C = –10 mA, IB = –1 mA

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

250

MHz

V

CE = –12 V, IC = –2 mA

 

 

 

 

 

 

 

 

Collector output capacitance

Cob

2.5

pF

V

CB = –10 V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

 

 

Note: 1. The 2SA1374 is grouped by hFE as follows.

C

D

160 to 320

250 to 500

 

 

See characteristic curves of 2SA836.

2

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