HIT 2SA1337 Datasheet

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HIT 2SA1337 Datasheet

2SA1337

Silicon PNP Epitaxial

Application

Low frequency low noise amplifier

HF amplefier

Outline

SPAK

1 2 3

1.

Emitter

2.

Collector

 

3.

Base

2SA1337

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–55

V

Collector to emitter voltage

VCEO

–50

V

Emitter to base voltage

VEBO

–5

V

Collector current

IC

–100

mA

 

 

 

 

Collector power dissipation

PC

300

mW

 

 

 

 

Junction temperature

Tj

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

 

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

V(BR)CBO

–55

V

I

C = –10 µA, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–50

V

I

C = –1 mA, RBE = ∞

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

V(BR)EBO

–5

V

I

E = –10 µA, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–0.5

µA

VCB = –18 V, IE = 0

Emitter cutoff current

IEBO

–0.5

µA

VEB = –2 V, IC = 0

DC current transfer ratio

h *1

100

320

 

V

CE

= –12 V, I = –2 mA

 

FE

 

 

 

 

 

C

Base to emitter voltage

VBE

–0.75

V

V

CE = –12 V, IC = –2 mA

Collector to emitter saturation

VCE(sat)

–0.2

V

I

C = –10 mA, IB = –1 mA

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

200

MHz

V

CE = –12 V, IC = –2 mA

 

 

 

 

 

 

 

 

Collector output capacitance

Cob

4.5

pF

V

CB = –10 V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

Noise figure

NF

1.0

5.0

dB

V CE = –6 V, IC = –0.1 mA,

 

 

 

 

 

 

Rg = 1 kΩ, f = 1 kHz

 

 

 

 

 

 

 

 

 

Note: 1. The 2SA1337 is grouped by hFE as follows.

B

C

100 to 200

160 to 320

 

 

See characteristic curves of 2SA1031.

2

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