HIT 2SA1193 Datasheet

Loading...
2SA1193(K)
Silicon PNP Epitaxial, Darlington
Application
High gain amplifier
Outline
3
2
1
1. Emitter
2. Collector
TO-92MOD
3
2
1
2SA1193(K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
–60 V
Collector to emitter voltage V
CEO
–60 V
Emitter to base voltage V
EBO
–7 V
Collector current I
C
–0.5 A
Collector peak current i
C(peak)
–1.0 A
Collector power dissipation P
C
0.9 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–60 V I
C
= –1 mA, R
BE
=
Collector cutoff current I
CBO
–1.0 µAV
CB
= –60 V, I
E
= 0
Emitter cutoff current I
EBO
–1.0 µAV
EB
= –7 V, I
C
= 0
DC current transfer ratio h
FE
2000 V
CE
= –3 V, I
C
= –250 mA*
1
Collector to emitter saturation
voltage
V
CE(sat)
–1.5 V I
C
= –250 mA, I
B
= –0.5 mA*
1
Base to emitter saturation
voltage
V
BE(sat)
–2.0 V
Turn on time t
on
0.3 µsI
C
= –250 mA
Turn off time t
off
0.9 µsI
B1
= –I
B2
= –0.5 mA
Note: 1. Pulse test
+ 4 hidden pages